公开(公告)号：US20230245925A1

公开(公告)日：2023-08-03

申请号：US18126048

申请日：2023-03-24

Applicant: Applied Materials, Inc.

Inventor： Wenyi LIU ,  Wei TANG ,  Srinivas GANDIKOTA ,  Yixiong YANG ,  Yong WU ,  Jianqiu GUO ,  Arkaprava DAN ,  Mandyam SRIRAM

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/28568

Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

公开(公告)号：US20210351071A1

公开(公告)日：2021-11-11

申请号：US16871400

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Wenyi LIU ,  Wei TANG ,  Srinivas GANDIKOTA ,  Yixiong YANG ,  Yong WU ,  Jianqiu GUO ,  Arkaprava DAN ,  Mandyam SRIRAM

IPC: H01L21/768 ,  H01L21/285

Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

公开(公告)号：US20160133489A1

公开(公告)日：2016-05-12

申请号：US14589990

申请日：2015-01-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Karthik JANAKIRAMAN ,  Abhijit Basu MALLICK ,  Hari K. PONNEKANTI ,  Mandyam SRIRAM ,  Alexandros T. DEMOS ,  Mukund SRINIVASAN ,  Juan Carlos ROCHA-ALVAREZ ,  Dale R. DUBOIS

IPC: H01L21/67 ,  C23C16/458 ,  H01L21/687 ,  C23C14/58 ,  C23C14/50 ,  B05C13/00 ,  C23C16/56

CPC classification number: H01L21/67207 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67213 ,  H01L21/67709 ,  H01L21/6776

Abstract: An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.

Abstract translation: 本文描述了一种用于在包含沉积室，处理室和隔离区域的处理系统中处理衬底的装置和方法，将沉积室与处理分离。 沉积室在基板上沉积膜。 处理室从沉积室接收衬底并且利用膜性质改变装置改变沉积在沉积室中的膜。 根据上述实施例和其他实施例提供处理系统和方法。