公开(公告)号：US20250166994A1

公开(公告)日：2025-05-22

申请号：US18601809

申请日：2024-03-11

Applicant: Applied Materials, Inc.

Inventor： Zhiyu HUANG ,  Tong LIU ,  Madhur Singh SACHAN ,  Sony VARGHESE ,  Keiichi NAKAZAWA

IPC: H01L21/033 ,  G03F7/00 ,  H01L21/311 ,  H01L21/768

Abstract: A method of forming a pattern in a device structure formed on a substrate includes forming one or more patterning layers over a surface of a device structure formed on the substrate, forming patterning features in the one or more patterning layers, depositing a film layer over a surface of the one or more patterning layers and the patterning features, and etching at least a portion of a first device feature of a plurality of device features that is exposed within each of film layer openings formed within the patterning features.

公开(公告)号：US20250167001A1

公开(公告)日：2025-05-22

申请号：US18912134

申请日：2024-10-10

Applicant: Applied Materials, Inc.

Inventor： Tong LIU ,  Sony VARGHESE ,  Madhur Singh SACHAN ,  Keiichi NAKAZAWA ,  Zhiyu HUANG

IPC: H01L21/308 ,  H01L21/311

Abstract: A method of forming a pattern in a device structure formed on a substrate includes forming one or more patterning layers over a surface of a device structure formed on the substrate, forming patterning features in the one or more patterning layers, depositing a non-conformal film layer over a surface of the one or more patterning layers and the patterning features, and etching a portion of a device feature of the plurality of device features that is exposed within each film layer opening formed within the patterning features. Each of the patterning features are disposed over at least a portion of a device feature of a plurality of device features, and each of the patterning features comprise a feature opening that comprises a first critical dimension (CD) that is greater than the first lateral dimension.