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    BORON IONIZATION FOR ALUMINUM OXIDE ETCH ENHANCEMENT
    2.
    发明申请
    BORON IONIZATION FOR ALUMINUM OXIDE ETCH ENHANCEMENT 有权
    用于氧化铝蚀刻增强的硼离子

    公开(公告)号：US20150076110A1

    公开(公告)日：2015-03-19

    申请号：US14028099

    申请日：2013-09-16

    Applicant: Applied Materials, Inc.

    Inventor： Kai WU ,  Sang Ho YU ,  Kie Jin PARK ,  Glen T. MORI ,  Joshua COLLINS

    IPC: C23F4/00 ,  H01J37/32

    CPC classification number: C23F4/00 ,  C23G5/00 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02068

    Abstract: Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.

    Abstract translation: 本文描述的实施例通常提供了一种用于执行半导体预清洗处理的方法。 更具体地，本文提供的实施方案涉及用于氧化铝蚀刻增强的硼电离。 从铝中除去天然氧化物的方法可以单独使用电离硼或与卤素等离子体组合使用。 电离硼可以提供改进的氧化铝蚀刻性质，同时更通常地对天然氧化物具有高选择性。

    DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION
    3.
    发明申请
    DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION 有权
    使用等离子体预处理和高温蚀刻沉积的方向SIO2蚀刻

    公开(公告)号：US20150072508A1

    公开(公告)日：2015-03-12

    申请号：US14466808

    申请日：2014-08-22

    Applicant: Applied Materials, Inc.

    Inventor： David T. OR ,  Joshua COLLINS ,  Mei CHANG

    IPC: H01L21/02 ,  H01L21/326 ,  H01L21/311

    CPC classification number: H01L21/31116 ,  H01L21/02057 ,  H01L21/324 ,  H01L21/326

    Abstract: Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.

    Abstract translation: 本文描述了用于处理衬底的方法。 方法可以包括将具有包括氧化硅层的暴露表面的衬底定位在处理室中，偏置衬底，处理衬底以使氧化硅层的一部分粗糙化，将衬底加热到​​第一温度，暴露暴露的表面 将基底置于氟化铵中以形成一种或多种挥发性产物，同时保持第一温度，并将基材加热到高于第一温度的第二温度以升华挥发性产物。

    DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION
    6.
    发明申请
    DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION 有权
    使用等离子体预处理和高温蚀刻沉积的方向SIO2蚀刻

    公开(公告)号：US20140193979A1

    公开(公告)日：2014-07-10

    申请号：US14031332

    申请日：2013-09-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： David T. OR ,  Joshua COLLINS ,  Mei CHANG

    IPC: H01L21/02

    CPC classification number: H01L21/02057 ,  H01L21/02

    Abstract: Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to a plasma comprising ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.

    Abstract translation: 本文描述了用于处理衬底的方法。 方法可以包括将具有包括氧化硅层的暴露表面的衬底定位在处理室中，偏置衬底，处理衬底以使氧化硅层的一部分粗糙化，将衬底加热到​​第一温度，暴露暴露的表面 所述衬底至含有氟化铵的等离子体，以形成一种或多种挥发性产物，同时保持第一温度，并将衬底加热到​​高于第一温度的第二温度以升华挥发性产物。

    HIGH TEMPERATURE TUNGSTEN METALLIZATION PROCESS
    7.
    发明申请
    HIGH TEMPERATURE TUNGSTEN METALLIZATION PROCESS 有权
    高温钨钢冶金工艺

    公开(公告)号：US20140187038A1

    公开(公告)日：2014-07-03

    申请号：US14145434

    申请日：2013-12-31

    Applicant: Applied Materials, Inc.

    Inventor： Joshua COLLINS ,  Murali K. NARASIMHAN ,  Jingjing LIU ,  Sang-Hyeob LEE ,  Kai WU ,  Avgerinos V. GELATOS

    IPC: H01L21/768

    CPC classification number: H01L21/76876 ,  H01L21/743 ,  H01L21/76814 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/53266 ,  H01L27/10885 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.

    Abstract translation: 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 在一个实施例中，在基板上形成含钨材料的方法包括在设置在基板上的电介质层上形成含有氮化钛的粘合层，在粘合层上形成氮化钨中间层，其中氮化钨中间层 含有氮化钨和碳。 该方法还包括在热退火过程中（例如，从约700℃至小于1000℃的温度）通过热分解从氮化钨中间层形成钨阻挡层（例如，钨或钨 - 碳材料） ）。 随后，该方法包括任选地在钨阻挡层上形成成核层，任选地在浸泡过程期间将钨阻挡层和/或成核层暴露于还原剂，以及在钨阻挡层上或之上形成钨体层，以及 /或成核层。

    PLASMA TREATMENT OF FILM FOR IMPURITY REMOVAL
    8.
    发明申请
    PLASMA TREATMENT OF FILM FOR IMPURITY REMOVAL 有权
    电浆去除等离子体处理

    公开(公告)号：US20140120700A1

    公开(公告)日：2014-05-01

    申请号：US14068301

    申请日：2013-10-31

    Applicant: Applied Materials, Inc.

    Inventor： Benjamin C. WANG ,  Joshua COLLINS ,  Michael JACKSON ,  Avgerinos V. GELATOS ,  Amit KHANDELWAL

    IPC: H01L21/768

    CPC classification number: H01L21/28556 ,  C23C16/0227 ,  C23C16/14 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877

    Abstract: Methods for plasma treatment of films to remove impurities are disclosed herein. Methods for removing impurities can include positioning a substrate with a barrier layer in a processing chamber, the barrier layer comprising a barrier metal and one or more impurities, maintaining the substrate at a bias, creating a plasma comprising a treatment gas, the treatment gas comprising an inert gas, delivering the treatment gas to the substrate to reduce the ratio of one or more impurities in the barrier layer, and reacting a deposition gas comprising a metal halide and hydrogen-containing gas to deposit a bulk metal layer on the barrier layer. The methods can further include the use of diborane to create selective nucleation in features over surface regions of the substrate.

    Abstract translation: 本文公开了等离子体处理膜以去除杂质的方法。 用于去除杂质的方法可以包括将具有阻挡层的衬底定位在处理室中，阻挡层包含阻挡金属和一种或多种杂质，保持衬底处于偏压状态，产生包含处理气体的等离子体，所述处理气体包括 惰性气体，将处理气体输送到基板以减少阻挡层中的一种或多种杂质的比例，以及使包含金属卤化物和含氢气体的沉积气体在阻挡层上沉积体金属层。 该方法还可以包括使用乙硼烷以在基材的表面区域上的特征中产生选择性成核。

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