公开(公告)号：US20150136732A1

公开(公告)日：2015-05-21

申请号：US14547702

申请日：2014-11-19

Applicant: Applied Materials, Inc.

Inventor： Xianmin TANG ,  Ludovic GODET ,  Guojun LIU ,  Jing TANG ,  Phillip STOUT ,  Rong TAO

IPC: C23C16/56 ,  C23C14/50 ,  C23C16/458 ,  C23C14/00

CPC classification number: C23C14/046

Abstract: A method and apparatus for depositing films on a substrate is described. The method includes depositing a film on a substrate with feature formed therein or thereon. The feature includes a first surface and a second surface that are at different levels. A least a portion of the deposited film is removed by exposing the substrate to an ion flux from a linear ion source. The ion flux has an ion angular spread of less than or equal to 90 degrees and greater than or equal to 15 degrees. In certain embodiments, the feature can be a nanoscale, high aspect ratio feature such as narrow, deep trench, a small diameter, deep hole, or a dual damascene structure. Such features are often found in integrated circuit devices.

Abstract translation: 描述了一种在衬底上沉积膜的方法和装置。 该方法包括在其上或其上形成特征的基底上沉积膜。 该特征包括处于不同水平的第一表面和第二表面。 通过将衬底暴露于来自线性离子源的离子通量来去除沉积膜的至少一部分。 离子通量具有小于或等于90度且大于或等于15度的离子角度扩展。 在某些实施例中，特征可以是纳米尺度的高纵横比特征，例如窄的，深的沟槽，小直径，深孔或双镶嵌结构。 这些特征通常在集成电路器件中找到。