公开(公告)号：US20160322255A1

公开(公告)日：2016-11-03

申请号：US15206112

申请日：2016-07-08

Applicant: Applied Materials, Inc.

Inventor： Tony CHIANG ,  Gongda YAO ,  Peijun DING ,  Fusen E. CHEN ,  Barry L. CHIN ,  Gene Y. KOHARA ,  Zheng XU ,  Hong ZHANG

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

Abstract: We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

Abstract translation: 我们公开了使用离子沉积溅射在半导体特征表面上施加雕刻的材料层的方法，其中施加有雕刻层的表面被保护以通过冲击沉积层的离子来抵抗侵蚀和污染。 使用传统的溅射或离子沉积溅射将第一保护层材料沉积在衬底表面上，结合足够低的衬底偏压，使得施加层的表面在保护层沉积期间不被腐蚀掉或被污染。 随后，使用离子沉积溅射在增加的衬底偏压下施加雕刻的第二材料层，以从材料的第一保护层的一部分和第二沉积材料层的一部分雕刻出形状。 该方法特别适用于在半导体特征表面上雕刻阻挡层，润湿层和导电层。