公开(公告)号：US20220415651A1

公开(公告)日：2022-12-29

申请号：US17361925

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Qixin Shen ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Gill Yong Lee ,  Sung-Kwan Kang ,  Abdul Wahab Mohammed ,  Hailing Liu

IPC: H01L21/02 ,  H01L21/033 ,  H01L27/108

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a silicon nitride hard mask layer on a ruthenium layer. Forming the silicon nitride hard mask layer on the ruthenium comprises pre-treating the ruthenium layer with a plasma to form an interface layer on the ruthenium layer; and forming a silicon nitride layer on the interface layer by plasma-enhanced chemical vapor deposition (PECVD). Pre-treating the ruthenium layer, in some embodiments, results in the interface layer having a reduced roughness and the memory device having a reduced resistivity compared to a memory device that does not include the interface layer.

公开(公告)号：US20230178365A1

公开(公告)日：2023-06-08

申请号：US17994592

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Wei Liu ,  Fredrick Fishburn ,  Hailing Liu

IPC: H01L21/02

CPC classification number: H01L21/02247 ,  H01L21/02153 ,  H01L21/0217 ,  H01L21/02252

Abstract: Semiconductor devices and methods of forming semiconductor devices are described. A method of forming metal silicon nitride films is disclosed. Some embodiments of the disclosure provide a process using ammonia plasma for treating a metal silicide or metal film to form a metal silicon nitride film. The ammonia plasma treatment generates NH* radicals that diffuse through the metal silicide to form a metal silicon nitride film that is substantially free of silicon nitride (SiN). The metal silicon nitride films have improved resistance relative to films deposited by thermal processes or plasma processes with a nitrogen plasma exposure.