公开(公告)号：US20250054748A1

公开(公告)日：2025-02-13

申请号：US18232133

申请日：2023-08-09

Applicant: Applied Materials, Inc.

Inventor： Guangyan Zhong ,  Jongbeom Seo ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/50 ,  H01J37/32 ,  H01L21/285

Abstract: Exemplary methods of semiconductor processing may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The methods may include contacting a surface of the substrate with the treatment precursor. The methods may include providing deposition precursors to the processing region. The deposition precursors may include a metal-containing precursor. The methods may include forming plasma effluents of the deposition precursors. The methods may include contacting the substrate with the plasma effluents of the deposition precursors. The contacting may deposit a metal-containing hardmask on the substrate.

公开(公告)号：US20240266185A1

公开(公告)日：2024-08-08

申请号：US18106697

申请日：2023-02-07

Applicant: Applied Materials, Inc.

Inventor： Han Wang ,  Yu Yang ,  Jing Zhang ,  Aykut Aydin ,  Guoqing Li ,  Guangyan Zhong ,  Rui Cheng ,  Gene H. Lee ,  Srinivas Guggilla ,  Sinae Heo ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  Karthik Janakiraman

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/31144 ,  H01L21/0332

Abstract: Exemplary semiconductor processing methods may include depositing a metal-doped boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The metal-doped boron-containing material may include a metal dopant comprising tungsten. The substrate may include a silicon-containing material. The methods may include depositing one or more additional materials over the metal-doped boron-containing material. The one or more additional materials may include a patterned photoresist material. The methods may include transferring a pattern from the patterned photoresist material to the metal-doped boron-containing material. The methods may include etching the metal-doped boron-containing material with a chlorine-containing precursor. The methods may include etching the silicon-containing material with a fluorine-containing precursor. The metal dopant may enhance an etch rate of the silicon-containing material. The methods may include removing the metal-doped boron-containing material from the substrate with a halogen-containing precursor.

公开(公告)号：US20240387190A1

公开(公告)日：2024-11-21

申请号：US18197545

申请日：2023-05-15

Applicant: Applied Materials, Inc.

Inventor： Guangyan Zhong ,  Jongbeom Seo ,  Eswaranand Venkatasubramanian ,  Santhosh Kiran Rajarajan ,  Diwakar Kedlaya ,  Ganesh Balasubramanian ,  Abhijit Basu Mallick

IPC: H01L21/3205 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285

Abstract: Exemplary methods of semiconductor processing may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor and a metal-containing precursor. The silicon-containing precursor and the metal-containing precursor may be fluidly isolated prior to reaching the processing region. A substrate may be housed within the processing region. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-metal-containing material on the substrate.

公开(公告)号：US20240387174A1

公开(公告)日：2024-11-21

申请号：US18197528

申请日：2023-05-15

Applicant: Applied Materials, Inc.

Inventor： Guangyan Zhong ,  Eswaranand Venkatasubramanian ,  Rui Cheng ,  Santhosh Kiran Rajarajan ,  Ganesh Balasubramanian ,  Abhijit Basu Mallick ,  Karthik Janakiraman ,  Guoqing Li

IPC: H01L21/033

Abstract: Exemplary methods of semiconductor processing may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-halogen-containing precursor and a metal-containing precursor. A substrate may be housed within the processing region. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-metal-containing material on the substrate.