公开(公告)号：US20250046652A1

公开(公告)日：2025-02-06

申请号：US18228846

申请日：2023-08-01

Applicant: Applied Materials, Inc.

Inventor： Benjamin D. Briggs ,  William Charles ,  Gillian Micale

IPC: H01L21/768 ,  H01L23/522

Abstract: A method includes obtaining a base structure including a stack of dielectric layers disposed on a substrate. The stack of dielectric layers includes a first photosensitive dielectric layer including a first photosensitive dielectric material sensitive to a first radiation dose, a second photosensitive dielectric layer including a second photosensitive dielectric material sensitive to a second radiation dose different from the first radiation dose, and a barrier layer disposed between the first photosensitive dielectric layer and the second photosensitive dielectric layer. The method further includes forming a dual damascene structure from the base structure using a dual damascene process.