公开(公告)号：US20230378368A1

公开(公告)日：2023-11-23

申请号：US17664335

申请日：2022-05-20

Applicant: Applied Materials, Inc.

Inventor： Fan DEJIU ,  Yun-chu TSAI ,  Dong Kil YIM

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/324

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/78696 ,  H01L21/324

Abstract: A method of forming a TFT is provided including forming a buffer layer over a substrate. A metal oxide channel layer is formed over the buffer layer and the channel layer is annealed. A gate insulator layer is formed over the channel layer and an ILD is deposited over the gate insulator layer to form the TFT. The TFT is annealed for a first annealing condition to form an annealed TFT. The annealed TFT is shorted or includes a first threshold voltage of about 0 volt or less. The annealed TFT is annealed for a second annealing condition to form a regenerated TFT having a second threshold voltage greater than the first threshold voltage, the second annealing condition includes a temperature of about 150° C. to about 275° C.