公开(公告)号：US20170213709A1

公开(公告)日：2017-07-27

申请号：US15006966

申请日：2016-01-26

Applicant: Applied Materials, Inc.

Inventor： Banqiu WU ,  Xiaoyi CHEN ,  David KNICK

IPC: H01J37/32 ,  B08B9/08 ,  C23F1/12

CPC classification number: H01J37/32862 ,  B08B9/08 ,  C23F1/12 ,  C23F4/00 ,  C23G5/00 ,  H01J37/32082 ,  H01J37/32816

Abstract: Embodiments of the disclosure include methods for in-situ chamber cleaning a plasma processing chamber utilized for photomask plasma fabrication process. In one embodiment, a method for in-situ chamber cleaning after a plasma process includes supplying a cleaning gas mixture including at least an oxygen containing gas and a hydrogen containing gas into the plasma processing chamber, controlling the processing pressure at less than 2 millitorr, applying a RF source power to the processing chamber to form a plasma from the cleaning gas mixture, and cleaning the processing chamber in the presence of the plasma.