公开(公告)号：US11387338B1

公开(公告)日：2022-07-12

申请号：US17155662

申请日：2021-01-22

Applicant: Applied Materials, Inc.

Inventor： Qintao Zhang ,  Samphy Hong ,  Lei Zhong ,  David Jon Lee ,  Felix Levitov ,  Carlos Caballero ,  Durgaprasad Chaturvedula

IPC: H01L21/336 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A method of forming a gate of a planar metal oxide semiconductor field effect transistor (MOSFET) reduces gate-drain capacitance. The method may include forming a first gate dielectric portion of the planar MOSFET with a first thickness that is configured to reduce the gate-drain capacitance of the planar MOSFET, forming a second gate dielectric portion of the planar MOSFET on the substrate with a second thickness less than the first thickness, and forming the gate of the planar MOSFET on the first gate dielectric portion and the second gate dielectric portion on the substrate.