公开(公告)号：US11795541B2

公开(公告)日：2023-10-24

申请号：US16759696

申请日：2017-11-16

Applicant: Applied Materials, Inc.

Inventor： Claire Armstrong ,  Frank Schnappenberger ,  Thomas Deppisch

IPC: C23C14/54 ,  C23C14/24

CPC classification number: C23C14/54 ,  C23C14/243

Abstract: A method (100) of cooling a deposition source (200) is described. The method includes stopping (110) depositing material from the deposition source, the deposition source being arranged in a deposition chamber (250), and introducing (120) a cooling gas into the deposition chamber (250), the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)]. Further, a chamber for cooling a deposition source is described. The chamber includes a deposition source being arranged in the chamber. Further, the chamber includes a cooling gas supply system configured for providing a cooling gas into the chamber, the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)].