公开(公告)号：US20240085810A1

公开(公告)日：2024-03-14

申请号：US18243129

申请日：2023-09-07

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Mangesh Ashok BANGAR ,  Chih-An HSU ,  Srinivas D. NEMANI ,  Dmitry LUBOMIRSKY ,  Ellie Y. YIEH

IPC: G03F7/00 ,  G03F7/40

CPC classification number: G03F7/70875 ,  G03F7/40

Abstract: A method and apparatus for performing post-exposure bake operations is described herein. After exposure of photoresist on a substrate, the substrate is heated during a baking process to facilitate protection of the resist. The baking process is performed in a vacuum environment at sub-atmospheric pressures. After baking at reduced pressure, the substrate is cooled. The cooling process is performed at sub-atmospheric pressures. Further development of the resist is performed at ambient pressures.