公开(公告)号：US20180327897A1

公开(公告)日：2018-11-15

申请号：US15961607

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： Aki HOSOKAWA

IPC: C23C14/35

CPC classification number: C23C14/35

Abstract: A cylindrical target assembly for use in a physical vapor deposition (PVD) processing chamber for magnetically enhanced sputtering applications. In embodiments disclosed herein, a cylindrical target, disposed around a rotatable backing tube, has one or more contoured ends that conform to a magnetic sputtering line located outside of a uniform magnetic field. The contoured ends prevent or substantially reduce the accumulation of redeposition material at either end of the cylindrical target assembly desirably reducing particle contamination in the process chamber and on the surfaces of substrates processed therein.

公开(公告)号：US20140216929A1

公开(公告)日：2014-08-07

申请号：US14169203

申请日：2014-01-31

Applicant: Applied Materials, Inc.

Inventor： Aki HOSOKAWA ,  John M. WHITE ,  Dong-Kil YIM

IPC: C23C14/34

CPC classification number: C23C14/3414 ,  C23C14/08 ,  C23C14/3407

Abstract: The present invention generally relates to a sputtering target comprised of zinc and a dopant. Zinc is utilized for metal oxide semiconductor materials, such as IGZO, zinc oxide and zinc oxynitride. The zinc may be delivered by sputtering a zinc target in a desired atmosphere. If a pure zinc sputtering target is used, a stable film cannot be produced unless mobility is sacrificed to below 10 cm2/V-s. By adding a dopant, such as gallium, not only can a stable film be deposited, but the film will have a mobility of greater than 30 cm2/V-s. The dopant can be incorporated directly into the zinc or as a separate sputtering target directly adjacent the zinc sputtering target.

Abstract translation: 本发明一般涉及由锌和掺杂剂组成的溅射靶。 锌用于金属氧化物半导体材料，例如IGZO，氧化锌和氮氧化锌。 可以通过在期望的气氛中溅射锌靶来递送锌。 如果使用纯锌溅射靶，则不能产生稳定的膜，除非将迁移率降低至10cm 2 / V-s以下。 通过添加诸如镓的掺杂剂，不仅可以沉积稳定的膜，而且膜将具有大于30cm 2 / V-s的迁移率。 掺杂剂可以直接结合到锌中或作为与锌溅射靶直接相邻的单独的溅射靶。