Displays with silicon and semiconducting oxide thin-film transistors

    公开(公告)号:US11587954B2

    公开(公告)日:2023-02-21

    申请号:US17502909

    申请日:2021-10-15

    申请人: Apple Inc.

    摘要: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Displays with silicon and semiconducting oxide thin-film transistors

    公开(公告)号:US10707237B2

    公开(公告)日:2020-07-07

    申请号:US16125973

    申请日:2018-09-10

    申请人: Apple Inc.

    摘要: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Sensing for compensation of pixel voltages

    公开(公告)号:US10535286B2

    公开(公告)日:2020-01-14

    申请号:US16255562

    申请日:2019-01-23

    申请人: Apple Inc.

    摘要: A display device may include rows of pixels that may display image data on a display and a circuit. The circuit may perform a progressive scan across the rows of pixels to display the image data using a plurality of pixels, supply test data to a pixel of plurality of pixels that corresponds to a first row of the rows of pixels during one frame of the progressive scan, and initiate a sensing period for determining one or more sensitivity properties associated with the pixel based on the performance of the pixel with respect to the test data in response to receiving a pulse of a first global signal. The circuit may then end the sensing period in response to receiving a second global signal and resume the progressive scan across the rows of pixels to display the image data after the sensing period ends.

    Organic light emitting diode displays with reduced leakage current

    公开(公告)号:US09734756B2

    公开(公告)日:2017-08-15

    申请号:US14315783

    申请日:2014-06-26

    申请人: Apple Inc.

    摘要: An electronic device may be provided with an organic light-emitting diode display. The display may include row driver circuitry that provides an emission control signal at an output terminal to display pixels. The emission control signals may enable or disable light emission by the pixels. The row driver circuitry may include a bootstrapping capacitor that stores charge for boosting a gate signal at an intermediate node for a pull-up transistor above a power supply voltage. The row driver circuitry may include a pull-down transistor coupled to the intermediate node. The source terminal of the pull-down transistor may be coupled to the output terminal or an additional pull-down transistor may be stacked with the pull-down transistor to reduce leakage current. Charge pump circuitry may be coupled to the intermediate node to ensure that the intermediate node is maintained at a voltage above the power supply voltage.