公开(公告)号：US20140340965A1

公开(公告)日：2014-11-20

申请号：US14336054

申请日：2014-07-21

Applicant: Apple Inc.

Inventor： Naftali Sommer ,  Uri Perlmutter ,  Shai Winter

IPC: G11C16/10 ,  G11C29/00 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3459 ,  G11C29/78

Abstract: A method for data storage includes defining, in a memory that includes multiple analog memory cells, an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states. Data is initially stored in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states. After initially storing the data, a second group of the analog memory cells, which potentially cause interference to the first group, is programmed. After programming the second group, the first group is selectively re-programmed with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.

Abstract translation: 一种用于数据存储的方法包括在包括多个模拟存储器单元的存储器中定义擦除状态，一组未擦除的编程状态和未擦除编程状态的部分子集。 最初将数据存储在第一组模拟存储器单元中，通过将第一组中的至少一些存储单元中的每一个从擦除状态编程为从非擦除编程状态集合中选择的各自的非擦除编程状态 。 在最初存储数据之后，编程可能对第一组产生干扰的第二组模拟存储器单元。 在对第二组进行编程之后，通过重复仅对其各自编程状态属于部分子集的第一组中的存储器单元进行编程，对该第一组进行有选择地重新编程。

公开(公告)号：US09153329B2

公开(公告)日：2015-10-06

申请号：US14336054

申请日：2014-07-21

Applicant: Apple Inc.

Inventor： Naftali Sommer ,  Uri Perlmutter ,  Shai Winter

IPC: G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/34 ,  G11C29/00

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3459 ,  G11C29/78

Abstract: A method for data storage includes defining, in a memory that includes multiple analog memory cells, an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states. Data is initially stored in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states. After initially storing the data, a second group of the analog memory cells, which potentially cause interference to the first group, is programmed. After programming the second group, the first group is selectively re-programmed with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.

Abstract translation: 一种用于数据存储的方法包括在包括多个模拟存储器单元的存储器中定义擦除状态，一组未擦除的编程状态和未擦除编程状态的部分子集。 最初将数据存储在第一组模拟存储器单元中，通过将第一组中的至少一些存储单元中的每一个从擦除状态编程为从非擦除编程状态集合中选择的各自的非擦除编程状态 。 在最初存储数据之后，编程可能对第一组产生干扰的第二组模拟存储器单元。 在对第二组进行编程之后，通过重复仅对其各自编程状态属于部分子集的第一组中的存储器单元进行编程，对该第一组进行有选择地重新编程。

公开(公告)号：US08670274B2

公开(公告)日：2014-03-11

申请号：US13943131

申请日：2013-07-16

Applicant: Apple Inc.

Inventor： Shai Winter ,  Ofir Shalvi

IPC: G11C11/34 ,  G11C16/06

CPC classification number: G11C16/3459 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3454

Abstract: A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing a storage value into the target memory cell. The storage value written into the target memory cell is verified while biasing the other memory cells in the group with respective first pass voltages. After writing and verifying the storage value, the storage value is read from the target memory cell while biasing the other memory cells in the group with respective second pass voltages, wherein at least one of the second pass voltages applied to one of the other memory cells in the group is lower than a respective first pass voltage applied to the one of the other memory cells. The data is reconstructed responsively to the read storage value.

Abstract translation: 一种用于数据存储的方法包括：通过将存储值写入到目标存储单元中，将数据存储在通过彼此串联连接的一组模拟存储单元之一的目标模拟存储单元中。 验证写入目标存储器单元的存储值，同时以相应的第一通过电压偏置组中的其他存储器单元。 在写入并验证存储值之后，从目标存储器单元读取存储值，同时以相应的第二通过电压偏置组中的其它存储单元，其中施加到其它存储单元之一中的至少一个第二通过电压 在组中低于施加到其他存储单元之一的相应的第一通过电压。 响应于读取的存储值重建数据。

公开(公告)号：US20130301360A1

公开(公告)日：2013-11-14

申请号：US13943131

申请日：2013-07-16

Applicant: Apple Inc.

Inventor： Shai Winter ,  Ofir Shalvi

IPC: G11C16/34

CPC classification number: G11C16/3459 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3454

Abstract: A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing a storage value into the target memory cell. The storage value written into the target memory cell is verified while biasing the other memory cells in the group with respective first pass voltages. After writing and verifying the storage value, the storage value is read from the target memory cell while biasing the other memory cells in the group with respective second pass voltages, wherein at least one of the second pass voltages applied to one of the other memory cells in the group is lower than a respective first pass voltage applied to the one of the other memory cells. The data is reconstructed responsively to the read storage value.

Abstract translation: 一种用于数据存储的方法包括：通过将存储值写入到目标存储单元中，将数据存储在通过彼此串联连接的一组模拟存储单元之一的目标模拟存储单元中。 验证写入目标存储器单元的存储值，同时以相应的第一通过电压偏置组中的其他存储器单元。 在写入并验证存储值之后，从目标存储器单元读取存储值，同时以相应的第二通过电压偏置组中的其它存储单元，其中施加到其它存储单元之一中的至少一个第二通过电压 在组中低于施加到其他存储单元之一的相应的第一通过电压。 响应于读取的存储值重建数据。