公开(公告)号：US09564901B1

公开(公告)日：2017-02-07

申请号：US14972754

申请日：2015-12-17

Applicant: Apple Inc.

Inventor： Daniel C. Chow ,  Kenneth W. Jones ,  William R. Weier

IPC: H03K19/0185 ,  H03K3/356 ,  H03K5/156

CPC classification number: H03K19/01855 ,  H03K5/05 ,  H03K5/1565

Abstract: A clock circuit configured to generate a falling edge independently of an input clock signal is disclosed. In one embodiment, a clock circuit includes an input circuit coupled to receive an input clock signal. A corresponding first clock signal is provided on a first clock node, while a second clock signal that is a delayed version of the first is provided on a second clock signal. The clock circuit may generate an output clock signal based on the first and second clock signals and a feedback signal received from a functional circuit coupled to receive the output clock signal. The rising edge of the output clock signal is generated dependent upon when the rising edge of the input clock signal is received. The falling edge of the output clock signal is generated by the clock circuit independently of when the falling edge of the input clock signal is received.

Abstract translation: 公开了一种配置成独立于输入时钟信号产生下降沿的时钟电路。 在一个实施例中，时钟电路包括耦合以接收输入时钟信号的输入电路。 在第一时钟节点上提供对应的第一时钟信号，而在第二时钟信号上提供作为第一时钟信号的延迟版本的第二时钟信号。 时钟电路可以基于第一和第二时钟信号产生输出时钟信号，以及从耦合以接收输出时钟信号的功能电路接收的反馈信号。 输出时钟信号的上升沿取决于输入时钟信号的上升沿何时被接收。 输出时钟信号的下降沿由时钟电路产生，独立于接收到输入时钟信号的下降沿时。

公开(公告)号：US20140016392A1

公开(公告)日：2014-01-16

申请号：US14029989

申请日：2013-09-18

Applicant: Apple Inc.

Inventor： Edward M. McCombs ,  Daniel C. Chow ,  Kenneth W. Jones ,  Alexander E. Runas

IPC: G11C5/06

CPC classification number: G11C5/063 ,  G11C7/06 ,  G11C11/4091 ,  G11C2207/002

Abstract: A memory includes an I/O unit that is shared between multiple storage arrays. The shared I/O unit provides output data from the arrays. The memory includes an isolation unit connected between each storage array and the shared I/O unit. In addition, each of the storage arrays and the shared I/O unit may be connected to a separate switched voltage domain through for example, power gating circuits. If one or more of the storage arrays is placed in retention or low-voltage mode, the isolation units that are coupled to the affected storage arrays may be configured to isolate the bitlines of those storage arrays from the shared I/O data paths.

Abstract translation: 存储器包括在多个存储阵列之间共享的I / O单元。 共享I / O单元提供阵列的输出数据。 存储器包括连接在每个存储阵列和共享I / O单元之间的隔离单元。 此外，每个存储阵列和共享I / O单元可以通过例如电源门控电路连接到单独的开关电压域。 如果一个或多个存储阵列被置于保持或低电压模式，则耦合到受影响的存储阵列的隔离单元可以被配置为将这些存储阵列的位线与共享的I / O数据路径隔离开来。

公开(公告)号：US08767495B2

公开(公告)日：2014-07-01

申请号：US14029989

申请日：2013-09-18

Applicant: Apple Inc.

Inventor： Edward M. McCombs ,  Daniel C. Chow ,  Kenneth W. Jones ,  Alexander E. Runas

IPC: G11C7/02

CPC classification number: G11C5/063 ,  G11C7/06 ,  G11C11/4091 ,  G11C2207/002

Abstract: A memory includes an I/O unit that is shared between multiple storage arrays. The shared I/O unit provides output data from the arrays. The memory includes an isolation unit connected between each storage array and the shared I/O unit. In addition, each of the storage arrays and the shared I/O unit may be connected to a separate switched voltage domain through for example, power gating circuits. If one or more of the storage arrays is placed in retention or low-voltage mode, the isolation units that are coupled to the affected storage arrays may be configured to isolate the bitlines of those storage arrays from the shared I/O data paths.

Abstract translation: 存储器包括在多个存储阵列之间共享的I / O单元。 共享I / O单元提供阵列的输出数据。 存储器包括连接在每个存储阵列和共享I / O单元之间的隔离单元。 此外，每个存储阵列和共享I / O单元可以通过例如电源门控电路连接到单独的开关电压域。 如果一个或多个存储阵列被置于保持或低电压模式，则耦合到受影响的存储阵列的隔离单元可以被配置为将这些存储阵列的位线与共享的I / O数据路径隔离开来。