公开(公告)号：US20220208697A1

公开(公告)日：2022-06-30

申请号：US17607724

申请日：2020-04-28

申请人： Amosense Co., Ltd.

发明人： Ji-Hyung LEE

IPC分类号： H01L23/00 ,  H01L23/373 ,  H01L21/48

摘要： Provided are a ceramic substrate and a method of manufacturing the same, which suppress a warpage phenomenon caused by a difference in volumes occupied by upper and lower metal layers of a ceramic base material and controls areas of the upper and lower metal layers especially when thicknesses of the upper and lower metal layers on the ceramic base material are equal to each other, thereby reducing a defect rate of the ceramic substrate.

公开(公告)号：US20230008518A1

公开(公告)日：2023-01-12

申请号：US17786488

申请日：2020-12-16

申请人： AMOSENSE CO.,LTD

发明人： Ji-Hyung LEE

IPC分类号： H01L23/373 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00

摘要： A semiconductor package of the present invention comprises a base plate, an insulating substrate, and a lead frame, wherein the base plate is made of a metallic material including Cu and Be—Cu. The present invention can ensure bonding reliability and thus prevent performance degradation of semiconductor devices.

公开(公告)号：US20220316071A1

公开(公告)日：2022-10-06

申请号：US17607996

申请日：2020-03-25

申请人： Amosense Co., Ltd.

发明人： Ji-Hyung LEE

IPC分类号： C23F1/02 ,  B23K1/20

摘要： The present invention is a method of manufacturing a ceramic substrate, the method including forming a mask on one surface of a metal layer, forming an inclined protrusion by etching the metal layer exposed by the mask, and bonding the metal layer on which the inclined protrusion is formed to a ceramic base material, and according to the present invention, the inclined protrusion is formed on an outer perimeter of the metal layer bonded to the ceramic base material to increase a bonding strength between the ceramic base material and the metal layer and facilitate a metal layer etching process.

公开(公告)号：US20230023610A1

公开(公告)日：2023-01-26

申请号：US17786461

申请日：2020-12-14

申请人： AMOSENSE CO.,LTD

发明人： Ji-Hyung LEE

IPC分类号： H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/03

摘要： A ceramic substrate according to the present invention includes: a ceramic base material; an electrode pattern formed on the ceramic base material; and at least one spacer arranged in any one of regions in the ceramic base material and the electrode pattern, in which a semiconductor chip is mounted.

公开(公告)号：US20200315003A1

公开(公告)日：2020-10-01

申请号：US16306984

申请日：2017-06-14

申请人： AMOSENSE CO., LTD.

发明人： Ji-Hyung LEE ,  Ik-Seong PARK ,  Hyeon-Choon CHO

IPC分类号： H05K1/02 ,  H05K1/03 ,  H05K3/02 ,  H05K3/38 ,  H05K3/06 ,  H01L23/498

摘要： A ceramic substrate is provided in which an inclined protrusion is formed on boundary surface of a metal layer bonded to a ceramic base so as to increase bonding strength; and a manufacturing method therefor. The inclined protrusion may include: a tapered protrusion and a multi-stepped protrusion formed on the boundary surface of the metal layer according to an interval between the metal layer bonded to the ceramic base and a neighboring metal layer, wherein a multi-stepped protrusion having an inclination angle within a predetermined angle range with respect to the ceramic base may be formed on the boundary surface of the metal layer where stress is concentrated, such as the short edge, apex, corner, and the like, and a tapered protrusion may be formed on a remaining portion of the boundary surface of the metal layer.