知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

216 条记录 (耗时 0.027 秒)

    Synthesis of soluble derivatives of sexithiophene and their use as the semiconducting channels in thin-film field-effect transistors
    1.
    发明授权
    Synthesis of soluble derivatives of sexithiophene and their use as the semiconducting channels in thin-film field-effect transistors 有权
    合成噻吩的可溶性衍生物及其在薄膜场效应晶体管中作为半导体通道的应用

    公开(公告)号：US06825358B2

    公开(公告)日：2004-11-30

    申请号：US10057024

    申请日：2002-01-25

    申请人： Ali Afzali-Ardakani ,  Tricia Lynn Breen ,  Cherie Renee Kagan

    发明人： Ali Afzali-Ardakani ,  Tricia Lynn Breen ,  Cherie Renee Kagan

    IPC分类号： C07D40900

    CPC分类号： C07F9/65586 ,  C07D333/24 ,  C07F9/655345 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

    摘要： In accordance with the first object of this invention soluble derivatives of sexithiophene in which terminal carbons are substituted with various polar groups such as phosphonic esters, phosphonic acids, phosphonates, carboxylic acids, carboxylates, amines, amides, carbamates, and alcohols, each separated from the terminal thiophene rings by one or more methylene groups, are synthesized. An TFT device in accordance with the second objective of this invention employs films of the above sexithiophene derivatives as the semiconducting component. These organic semiconductors are dissolved in common organic solvents and applied to the surface of a substrate using inexpensive, low-temperature solution-based processing such as spin-coating, dip-coating, drop-casting, or microcontact printing.

    摘要翻译： 根据本发明的第一个目的，其中末端碳被诸如膦酸酯，膦酸，膦酸盐，羧酸，羧酸盐，胺，酰胺，氨基甲酸盐和醇的各种极性基团所取代的噻吩的可溶性衍生物， 由一个或多个亚甲基组成的末端噻吩环。 根据本发明的第二目的的TFT器件使用上述异噻吩衍生物的膜作为半导体元件。 将这些有机半导体溶解在普通有机溶剂中，并使用廉价的低温溶液型加工如旋涂，浸涂，滴涂或微接触印刷，将其溶解于基材表面。

    Method of preparing an extended conjugated molecular assembly
    2.
    发明授权
    Method of preparing an extended conjugated molecular assembly 有权
    制备延伸的共轭分子组装体的方法

    公开(公告)号：US07521091B2

    公开(公告)日：2009-04-21

    申请号：US11477664

    申请日：2006-06-30

    申请人： Ali Afzali-Ardakani ,  Cherie Renee Kagan

    发明人： Ali Afzali-Ardakani ,  Cherie Renee Kagan

    IPC分类号： B05D3/10 ,  B05D5/12

    CPC分类号： H01L51/0595 ,  B05D1/185 ,  B05D7/52 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/004 ,  H01L51/0041 ,  H01L51/0068 ,  H01L51/0077 ,  H01L51/0512

    摘要： A method for preparing an extended conjugated molecular assembly includes applying onto a surface of a substrate a first molecular compound G1-Molecule1-G2, where G1 includes a first functional group, G2 includes a second functional group, and Molecule1 includes a conjugated organic group bonded to G1 and G2, reacting the first molecular compound with a second molecular compound G3-Molecule2-G4, where G3 includes a third functional group, G4 includes a fourth function group, and Molecule 2 includes a conjugated organic group bonded to G3 and G4, to form on the substrate an extended conjugated molecule G1-Molecule1-Molecule2-G4, and reacting the extended conjugated molecule with an additional molecular compound at least once to further extend the molecular assembly, the fourth functional group G4 interacting with the additional molecular compound.

    摘要翻译： 制备延伸的共轭分子组件的方法包括将第一分子化合物G1-Molecule1-G2（其中G1包括第一官能团）施加到基材的表面上，G2包括第二官能团，并且分子1包括键合的共轭有机基团 对于G1和G2，使第一分子化合物与第二分子化合物G3-Molecule2-G4反应，其中G3包括第三官能团，G4包括第四官能团，分子2包括键合到G3和G4的共轭有机基团， 在基底上形成延伸的共轭分子G1-Molecule1-Molecule2-G4，并使延伸的共轭分子与另外的分子化合物反应至少一次以进一步延长分子组装，第四官能团G4与另外的分子化合物相互作用。

    Method of preparing a conjugated molecular assembly
    3.
    发明授权
    Method of preparing a conjugated molecular assembly 有权
    制备共轭分子组件的方法

    公开(公告)号：US07166327B2

    公开(公告)日：2007-01-23

    申请号：US10392977

    申请日：2003-03-21

    申请人： Ali Afzali-Ardakani ,  Cherie Renee Kagan

    发明人： Ali Afzali-Ardakani ,  Cherie Renee Kagan

    IPC分类号： B05D3/10

    CPC分类号： H01L51/0595 ,  B05D1/185 ,  B05D7/52 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/004 ,  H01L51/0041 ,  H01L51/0068 ,  H01L51/0077 ,  H01L51/0512

    摘要： A method for preparing an extended conjugated molecular assembly includes applying onto a surface of a substrate a first molecular compound G1-Molecule1-G2, where G1 includes a first functional group, G2 includes a second functional group, and Molecule1 includes a conjugated organic group bonded to G1 and G2, and reacting the first molecular compound with a second molecular compound G3-Molecule2-G4, where G3 includes a third functional group. G4 includes a fourth function group, and Molecule 2 includes a conjugated organic group bonded to G3 and G4, to form on the substrate an extended conjugated molecule G1-Molecule1-Molecule2-G4.

    摘要翻译： 制备延伸的共轭分子组件的方法包括将第一分子化合物G1-Molecule1-G2（其中G1包括第一官能团）施加到基材的表面上，G2包括第二官能团，并且分子1包括键合的共轭有机基团 至G1和G2，并使第一分子化合物与第二分子化合物G3-Molecule2-G4反应，其中G3包括第三官能团。 G4包括第四官能团，分子2包括与G3和G4键合的共轭有机基团，以在基底上形成延伸的共轭分子G1-Molecule1-Molecule2-G4。

    Synthesis of soluble derivatives of sexithiophene and their use as the semiconducting channels in thin-film filed-effect transistors
    4.
    发明授权
    Synthesis of soluble derivatives of sexithiophene and their use as the semiconducting channels in thin-film filed-effect transistors 有权
    合成噻吩的可溶性衍生物及其作为半导体通道在薄膜场效应晶体管中的应用

    公开(公告)号：US06414164B1

    公开(公告)日：2002-07-02

    申请号：US09614232

    申请日：2000-07-12

    申请人： Ali Afzali-Ardakani ,  Tricia Lynn Breen ,  Cherie Renee Kagan

    发明人： Ali Afzali-Ardakani ,  Tricia Lynn Breen ,  Cherie Renee Kagan

    IPC分类号： C07D32700

    CPC分类号： C07F9/65586 ,  C07D333/24 ,  C07F9/655345 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

    摘要： In accordance with the first object of this invention soluble derivatives of sexithiophene in which terminal carbons are substituted with various polar groups such as phosphonic esters, phosphonic acids, phosphonates, carboxylic acids, carboxylates, amines, amides, carbamates, and alcohols, each separated from the terminal thiophene rings by one or more methylene groups, are synthesized. An TFT device in accordance with the second objective of this invention employs films of the above sexithiophene derivatives as the semiconducting component. These organic semiconductors are dissolved in common organic solvents and applied to the surface of a substrate using inexpensive, low-temperature solution-based processing such as spin-coating, dip-coating, drop-casting, or microcontact printing.

    摘要翻译： 根据本发明的第一个目的，其中末端碳被诸如膦酸酯，膦酸，膦酸盐，羧酸，羧酸盐，胺，酰胺，氨基甲酸盐和醇的各种极性基团所取代的噻吩的可溶性衍生物， 由一个或多个亚甲基组成的末端噻吩环。 根据本发明的第二目的的TFT器件使用上述异噻吩衍生物的膜作为半导体元件。 将这些有机半导体溶解在普通有机溶剂中，并使用廉价的低温溶液型加工如旋涂，浸涂，滴涂或微接触印刷，将其溶解于基材表面。

    Forming patterned graphene layers
    5.
    发明授权
    Forming patterned graphene layers 有权
    形成图案化石墨烯层

    公开(公告)号：US09102118B2

    公开(公告)日：2015-08-11

    申请号：US13310885

    申请日：2011-12-05

    申请人： Ali Afzali-Ardakani ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Katherine Saenger

    发明人： Ali Afzali-Ardakani ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Katherine Saenger

    IPC分类号： B82Y30/00 ,  B82Y40/00 ,  B32B3/00 ,  C01B31/02 ,  C23F1/02 ,  H01B13/00 ,  C01B31/04

    CPC分类号： H01B1/04 ,  B32B3/00 ,  B32B3/12 ,  B32B9/007 ,  B32B9/041 ,  B32B15/20 ,  B32B2307/202 ,  B32B2307/206 ,  B32B2457/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C23F1/02 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/324 ,  Y10T428/24545 ,  Y10T428/24851 ,  Y10T428/24909 ,  Y10T428/24917

    摘要： An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.

    摘要翻译： 一种用于在衬底上形成图案化的石墨烯层的装置和方法。 一种这样的方法包括在基底上形成碳化物形成金属或含金属合金的至少一个图案化结构，在碳化物形成金属或含金属合金的至少一个图案化结构的顶部上施加石墨烯层 在基板上，在环境中在形成碳化物的金属或含金属的合金的至少一个图案化结构的顶部上加热石墨烯层，以去除邻近碳化物形成金属的至少一个图案化结构的石墨烯区域 或含金属的合金，以及去除形成碳化物的金属或含金属的合金的至少一个图案化结构，以在衬底上产生图案化的石墨烯层，其中衬底上的图案化石墨烯层提供电子器件的载流子迁移率。

    Chemical oxidation of graphene and carbon nanotubes using Cerium (IV) ammonium nitrate
    7.
    发明授权
    Chemical oxidation of graphene and carbon nanotubes using Cerium (IV) ammonium nitrate 有权
    使用硝酸铈（IV）硝酸铵对石墨烯和碳纳米管进行化学氧化

    公开(公告)号：US08912525B2

    公开(公告)日：2014-12-16

    申请号：US13329115

    申请日：2011-12-16

    申请人： Ali Afzali-Ardakani ,  Bhupesh Chandra ,  George S. Tulevski

    发明人： Ali Afzali-Ardakani ,  Bhupesh Chandra ,  George S. Tulevski

    IPC分类号： H01L29/06

    CPC分类号： H01L29/78 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  C01B32/194

    摘要： A process comprises combining a Ce (IV) salt with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid and is dissolved in a solvent comprising water. The process is conducted under conditions to substantially oxidize the carbon material to produce an oxidized material that is substantially non-conducting. After the oxidation, the Ce (IV) is substantially removed from the oxidized material. This produces a product made by the process. An article of manufacture comprises the product on a substrate. The oxidized material can be formed as a pattern on the substrate. In another embodiment the substrate comprises an electronic device with the oxidized material patterning non-conductive areas separate from conductive areas of the non-oxidized carbon material, where the conductive areas are operatively associated with the device.

    摘要翻译： 一种方法包括将Ce（IV）盐与包含CNT或石墨烯的碳材料组合，其中Ce（IV）盐选自氮氧化物的Ce（IV）铵盐，并溶解在包含水的溶剂中。 该方法在基本上氧化碳材料以产生基本不导电的氧化材料的条件下进行。 在氧化之后，Ce（IV）从氧化物质中大体上去除。 这产生了由该过程制成的产品。 制品包括在基材上的产品。 氧化物可以形成为基板上的图案。 在另一个实施例中，衬底包括电子器件，其中氧化材料图案化非导电区域与非氧化碳材料的导电区域分离，其中导电区域与器件可操作地相关联。

    Graphene transistors with self-aligned gates
    8.
    发明授权
    Graphene transistors with self-aligned gates 有权
    具有自对准栅极的石墨烯晶体管

    公开(公告)号：US08803130B2

    公开(公告)日：2014-08-12

    申请号：US13492097

    申请日：2012-06-08

    申请人： Ali Afzali-Ardakani ,  Phaedon Avouris ,  Damon B. Farmer ,  Yu-Ming Lin ,  Yu Zhu

    发明人： Ali Afzali-Ardakani ,  Phaedon Avouris ,  Damon B. Farmer ,  Yu-Ming Lin ,  Yu Zhu

    IPC分类号： H01L29/06

    CPC分类号： H01L29/1606 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/7781 ,  Y10S977/734

    摘要： Graphene transistor devices and methods of their fabrication are disclosed. One such graphene transistor device includes source and drain electrodes and a gate structure including a dielectric sidewall spacer that is disposed between the source and drain electrodes. The device further includes a graphene layer that is adjacent to at least one of the source and drain electrodes, where an interface between the source/drain electrode(s) and the graphene layer maintains a consistent degree of electrical conductivity throughout the interface.

    摘要翻译： 公开了石墨烯晶体管器件及其制造方法。 一种这样的石墨烯晶体管器件包括源电极和漏电极以及包括设置在源极和漏极之间的电介质侧壁间隔物的栅极结构。 该器件还包括与源极和漏极电极中的至少一个相邻的石墨烯层，其中源/漏电极和石墨烯层之间的界面在整个界面处保持一致的电导率。