发明授权
- 专利标题: Forming patterned graphene layers
- 专利标题(中): 形成图案化石墨烯层
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申请号: US13310885申请日: 2011-12-05
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公开(公告)号: US09102118B2公开(公告)日: 2015-08-11
- 发明人: Ali Afzali-Ardakani , Ahmed Maarouf , Glenn J. Martyna , Katherine Saenger
- 申请人: Ali Afzali-Ardakani , Ahmed Maarouf , Glenn J. Martyna , Katherine Saenger
- 申请人地址: US NY Armonk EG Cairo
- 专利权人: International Business Machines Corporation,Egypt Nanotechnology Center (EGNC)
- 当前专利权人: International Business Machines Corporation,Egypt Nanotechnology Center (EGNC)
- 当前专利权人地址: US NY Armonk EG Cairo
- 代理机构: Ryan, Mason & Lewis, LLP
- 主分类号: B82Y30/00
- IPC分类号: B82Y30/00 ; B82Y40/00 ; B32B3/00 ; C01B31/02 ; C23F1/02 ; H01B13/00 ; C01B31/04
摘要:
An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
公开/授权文献
- US20130143000A1 Forming Patterned Graphene Layers 公开/授权日:2013-06-06
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