知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.012 秒)

    Optoelectronic circuit with low-flicker light-emitting diodes
    1.
    发明授权
    Optoelectronic circuit with low-flicker light-emitting diodes 有权

    公开(公告)号：US09854632B2

    公开(公告)日：2017-12-26

    申请号：US15323233

    申请日：2015-07-08

    申请人： Aledia

    发明人： Frédéric Mercier ,  Erwan Dornel ,  Xavier Hugon

    IPC分类号： H05B33/08 ,  H01L27/15 ,  H01L33/48 ,  H01L33/62

    CPC分类号： H05B33/083 ,  H01L27/15 ,  H01L27/156 ,  H01L33/483 ,  H01L33/62 ,  H05B33/0803 ,  H05B33/0815

    摘要： An optoelectronic circuit for receiving a variable voltage having alternating increasing and decreasing phases. The optoelectronic circuit includes an alternating arrangement of resistive elements and light-emitting diode sets mounted in series. Each set contains two terminals. Each resistive element is inserted between two consecutive sets. The optoelectronic circuit includes, for each set among a plurality of said sets, a depletion mode metal oxide semiconductor field effect transistor, the drain and the source of which are coupled with the terminals of said set and the gate of which is coupled with one of the terminals of the next set. An additional resistive element is, for at least some of the transistors, coupled between the drain or the source of the transistor and one of the terminals of the set.

    OPTOELECTRONIC DEVICE COMPRISING SEMICONDUCTOR ELEMENTS AND ITS FABRICATION PROCESS
    2.
    发明申请
    OPTOELECTRONIC DEVICE COMPRISING SEMICONDUCTOR ELEMENTS AND ITS FABRICATION PROCESS 审中-公开
    包含半导体元件的光电子器件及其制造工艺

    公开(公告)号：US20160322536A1

    公开(公告)日：2016-11-03

    申请号：US15108738

    申请日：2014-12-23

    申请人： ALEDIA

    发明人： Erwan Dornel ,  Benoît Amstatt ,  Philippe Gilet

    IPC分类号： H01L33/24 ,  H01L33/18 ,  H01L33/00

    CPC分类号： H01L33/24 ,  H01L21/02639 ,  H01L29/0665 ,  H01L33/005 ,  H01L33/0075 ,  H01L33/18

    摘要： An optoelectronic device including semiconductor elements, each semiconductor element resting on a carrier through an aperture formed in a portion at least one first part of which is insulating and covers at least partially the carrier, the height of the aperture being larger than or equal to 100 nm and smaller than or equal to 3000 nm and the ratio of the height to the smallest diameter of the aperture being higher than or equal to 0.5 and lower than or equal to 10.

    摘要翻译： 一种包括半导体元件的光电器件，每个半导体元件通过形成在其至少一个第一部分绝缘并至少部分地覆盖载体的部分的孔上而放置在载体上，孔的高度大于或等于100 nm且小于或等于3000nm，并且孔的高度与最小直径的比率高于或等于0.5且小于或等于10。

    Optoelectronic device comprising light-emitting diodes
    3.
    发明授权
    Optoelectronic device comprising light-emitting diodes 有权

    公开(公告)号：US11764196B2

    公开(公告)日：2023-09-19

    申请号：US17255384

    申请日：2019-06-24

    申请人： Aledia

    发明人： Ivan-Christophe Robin ,  Erwan Dornel ,  Frédéric Mercier

    IPC分类号： H01L25/16 ,  H01L33/50 ,  H01L33/62 ,  H01L33/00

    CPC分类号： H01L25/167 ,  H01L33/0093 ,  H01L33/505 ,  H01L33/62

    摘要： An optoelectronic device including a support, at least a first conductive layer covering the support, display pixels including first and second opposite surfaces, bonded to the first conductive layer, each pixel including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first conductive layer, and an optoelectronic circuit bonded to the third surface and including at least two light-emitting diodes, at least one of the electrodes of each light-emitting diode being connected to the electronic circuit by the third surface, the optoelectronic circuit further comprising photoluminescent blocks covering the light-emitting diodes and conductive or semiconductor walls surrounding the photoluminescent blocks, and at least one second conductive layer electrically coupled to at least one of the pixels.

    OPTOELECTRONIC DEVICE COMPRISING A MATRIX OF THREE-DIMENSIONAL DIODES
    4.
    发明申请
    OPTOELECTRONIC DEVICE COMPRISING A MATRIX OF THREE-DIMENSIONAL DIODES 审中-公开

    公开(公告)号：US20200335548A1

    公开(公告)日：2020-10-22

    申请号：US16958628

    申请日：2018-12-21

    申请人： Aledia

    发明人： Vincent Beix ,  Erwan Dornel

    IPC分类号： H01L27/15

    摘要： The disclosure relates to an optoelectronic device comprising: a plurality of separate first electrodes that extend longitudinally in parallel to an axis A1, each first electrode being formed of a longitudinal conductive portion and a conductive nucleation strip, the longitudinal conductive portion having an electrical resistance lower than that of the conductive nucleation strip; a plurality of diodes; at least one intermediate insulating layer covering the first electrodes; and a plurality of separate second electrodes in the form of transparent conductive strips that extend longitudinally in contact with second doped portions, and are electrically insulated from the first electrodes by means of the intermediate insulating layer, parallel to an axis A2, the axis A2 not being parallel to axis A1.

    Light-emitting device with integrated light sensor
    5.
    发明授权
    Light-emitting device with integrated light sensor 有权

    公开(公告)号：US10418506B2

    公开(公告)日：2019-09-17

    申请号：US15758721

    申请日：2016-09-09

    申请人： Aledia

    发明人： Tiphaine Dupont ,  Erwan Dornel

    IPC分类号： H01L31/173 ,  H01L31/16 ,  H01L31/167 ,  H01L25/16 ,  H01L33/08 ,  H01L33/18 ,  H01L27/146 ,  H01L27/15

    摘要： A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.

    OPTOELECTRONIC CIRCUIT WITH LOW-FLICKER LIGHT-EMITTING DIODES
    10.
    发明申请
    OPTOELECTRONIC CIRCUIT WITH LOW-FLICKER LIGHT-EMITTING DIODES 有权

    公开(公告)号：US20170223784A1

    公开(公告)日：2017-08-03

    申请号：US15323233

    申请日：2015-07-08

    申请人： Aledia

    发明人： Frédéric Mercier ,  Erwan Dornel ,  Xavier Hugon

    IPC分类号： H05B33/08 ,  H01L33/48 ,  H01L33/62 ,  H01L27/15

    CPC分类号： H05B33/083 ,  H01L27/15 ,  H01L27/156 ,  H01L33/483 ,  H01L33/62 ,  H05B33/0803 ,  H05B33/0815

    摘要： An optoelectronic circuit for receiving a variable voltage having alternating increasing and decreasing phases. The optoelectronic circuit includes an alternating arrangement of resistive elements and light-emitting diode sets mounted in series. Each set contains two terminals. Each resistive element is inserted between two consecutive sets. The optoelectronic circuit includes, for each set among a plurality of said sets, a depletion mode metal oxide semiconductor field effect transistor, the drain and the source of which are coupled with the terminals of said set and the gate of which is coupled with one of the terminals of the next set. An additional resistive element is, for at least some of the transistors, coupled between the drain or the source of the transistor and one of the terminals of the set.