公开(公告)号：US10943800B2

公开(公告)日：2021-03-09

申请号：US15490817

申请日：2017-04-18

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Fan-Yu Min ,  Chao-Hung Weng ,  Liang-Chun Chen

IPC分类号： H01L21/67 ,  H01L21/56

摘要： An apparatus for packaging a semiconductor device is provided. The apparatus includes a first mold, a second mold and a support element. The first mold includes a plate. The second mold includes a carrier disposed corresponding to the plate. The carrier defines a hole penetrating the carrier. The support element is engaged with the hole for supporting an object to be molded.

公开(公告)号：US11244909B2

公开(公告)日：2022-02-08

申请号：US16817407

申请日：2020-03-12

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Fan-Yu Min ,  Chen-Hung Lee ,  Wei-Hang Tai ,  Yuan-Tzuo Luo ,  Wen-Yuan Chuang ,  Chun-Cheng Kuo ,  Chin-Li Kao

IPC分类号： H01L23/00 ,  H01L23/16 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56

摘要： A package structure and a manufacturing method are provided. The package structure includes a wiring structure, a first electronic device and a second electronic device. The first electronic device is disposed on the wiring structure. The second electronic device is disposed on the wiring structure. The first electronic device and the second electronic device are disposed side by side. A gap between the first electronic device and the second electronic device is greater than or equal to about 150 μm.

公开(公告)号：US11094649B2

公开(公告)日：2021-08-17

申请号：US16748559

申请日：2020-01-21

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Fan-Yu Min ,  Chen-Hung Lee ,  Hsiu-Chi Liu ,  Liang-Chun Chen

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

摘要： Present disclosure provides a semiconductor package structure, which includes a redistribution layer (RDL) structure, an electronic device, a first reinforcement structure, a second reinforcement structure, and an encapsulant. The RDL structure has a passivation layer and a patterned conductive layer disposed in the passivation layer. The electronic device is disposed on the RDL structure. The first reinforcement structure is disposed on the RDL structure and has a first modulus. The second reinforcement structure is disposed on the first reinforcement structure and has a second modulus substantially less than the first modulus. The encapsulant is disposed on the RDL structure and encapsulates the electronic device, the first reinforcement structure and the second reinforcement structure.

公开(公告)号：US11107791B2

公开(公告)日：2021-08-31

申请号：US16354156

申请日：2019-03-14

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Fan-Yu Min ,  Chao-Hung Weng ,  Wei-Hang Tai ,  Chen-Hung Lee ,  Yu-Yuan Yeh

IPC分类号： H01L23/48 ,  H01L25/065 ,  H01L23/31 ,  H01L23/00 ,  H01L25/00 ,  H01L21/56 ,  H01L23/538 ,  H01L21/768 ,  H01L21/288 ,  H01L21/48 ,  H01L21/683

摘要： A semiconductor package structure includes a conductive structure, a first semiconductor chip, a second semiconductor chip, a first encapsulant and an upper semiconductor chip. The first semiconductor chip is electrically connected to the conductive structure. The first semiconductor chip includes at least one first conductive element disposed adjacent to a second surface thereof. The second semiconductor chip is electrically connected to the conductive structure and disposed next to the first semiconductor chip. The second semiconductor chip includes at least one second conductive element disposed adjacent to a second surface thereof. The first encapsulant is disposed on the conductive structure to cover the first semiconductor chip and the second semiconductor chip. The first conductive element and the second conductive element are exposed from the first encapsulant. The upper semiconductor chip is disposed on the first encapsulant and electrically connected to the first conductive element and the second conductive element.