INSPECTION METHOD, LITHOGRAPHIC APPARATUS, MASK AND SUBSTRATE
    1.
    发明申请
    INSPECTION METHOD, LITHOGRAPHIC APPARATUS, MASK AND SUBSTRATE 有权
    检验方法,光刻设备,掩模和基板

    公开(公告)号:US20160313656A1

    公开(公告)日:2016-10-27

    申请号:US15104212

    申请日:2014-11-20

    CPC classification number: G03F7/70641 G03F7/70683

    Abstract: A method and apparatus for obtaining focus information relating to a lithographic process. The method includes illuminating a target, the target having alternating first and second structures, wherein the form of the second structures is focus dependent, while the form of the first structures does not have the same focus dependence as that of the second structures, and detecting radiation redirected by the target to obtain for that target an asymmetry measurement representing an overall asymmetry of the target, wherein the asymmetry measurement is indicative of focus of the beam forming the target. An associated mask for forming such a target, and a substrate having such a target.

    Abstract translation: 一种用于获得与光刻工艺相关的焦点信息的方法和装置。 该方法包括照亮目标,目标具有交替的第一和第二结构,其中第二结构的形式是聚焦依赖的,而第一结构的形式不具有与第二结构相同的焦点依赖性,并且检测 由目标重定向的辐射以为该目标获得表示目标的总体不对称性的不对称测量,其中不对称测量指示形成目标的波束的焦点。 用于形成这种靶的相关掩模和具有这种靶的基片。

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