公开(公告)号：US20240231247A1

公开(公告)日：2024-07-11

申请号：US18413910

申请日：2024-01-16

Applicant: ASML Netherlands B.V.

Inventor： Arjan Johannes Anton BEUKMAN ,  Omar EL GAWHARY ,  Ilse VAN WEPEREN ,  Pieter Joseph Marie WÖLTGENS

IPC: G03F9/00

CPC classification number: G03F9/7088 ,  G03F9/7046

Abstract: Disclosed is a method for measuring alignment on an alignment mark, and associated apparatuses. The method comprises illuminating the alignment mark with illumination comprising at least one wavelength; capturing the scattered radiation scattered from the alignment mark as a result of said illumination step, and determining at least one position value for said alignment mark from an angularly resolved representation of said scattered radiation, wherein said alignment mark, or a feature thereof, is smaller than said at least one wavelength in at least one dimension of a substrate plane.

公开(公告)号：US20200097633A1

公开(公告)日：2020-03-26

申请号：US16541420

申请日：2019-08-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Sunit Sondhi MAHAJAN ,  Abraham SLACHTER ,  Brennan PETERSON ,  Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN ,  Antonio CORRADI ,  Pieter Joseph Marie WÖLTGENS

IPC: G06F17/50 ,  G03F7/20

Abstract: A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method including: obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and determining a process setting for the processing apparatus associated with a location on the substrate, wherein the process setting is at least partially based on an expected value of the geometric parameter of the structure when using the processing setting, a desired performance characteristic of the device and an expected physical yield margin or defect yield margin associated with the location on the substrate.