公开(公告)号：US08945800B2

公开(公告)日：2015-02-03

申请号：US13965103

申请日：2013-08-12

Applicant: ASML Netherlands B.V.

Inventor： Tsann-Bim Chiou ,  Mircea Dusa ,  Alek Chi-Heng Chen

IPC: G03F1/22 ,  G03F1/68 ,  G03F7/26 ,  G06F17/50 ,  G03F7/20

CPC classification number: G03F1/22 ,  G03F1/00 ,  G03F1/68 ,  G03F1/70 ,  G03F7/70341 ,  G03F7/70433 ,  G03F7/70466 ,  G06F17/5068

Abstract: In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.

Abstract translation: 在使用两个或多个曝光来形成设备的单层的多重图案化技术中，在多个曝光之间的单个层中的特征的分割是通过参考另一个相关层的特征进行的，并且分割 该层分为两组或多组功能，用于单独曝光。 多次曝光过程可以是涉及重复光刻蚀步骤的过程，期望地，参考分割方法优化在分离层的曝光期间使用的对准方案。