公开(公告)号：US20220171299A1

公开(公告)日：2022-06-02

申请号：US17599302

申请日：2020-01-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Ruud Hendrikus Martinus Johannes BLOKS ,  Hendrik Cornelis Anton BORGER ,  Frederik Eduard DE JONG ,  Johan Gertrudis Cornelis KUNNEN ,  Siebe LANDHEER ,  Chung-Hsun LI ,  Patricius Jacobus NEEFS ,  Georgios TSIROGIANNIS ,  Si-Han ZENG

IPC: G03F7/20

Abstract: A method of determining an overlay value of a substrate, the method including: obtaining temperature data that includes data on measured temperature at one or more positions on a substrate table after a substrate has been loaded onto the substrate table; and determining an overlay value of the substrate in dependence on the obtained temperature data. There is further disclosed a method of determining a performance of a clamping by a substrate table using a determined overlay value.

公开(公告)号：US20210397152A1

公开(公告)日：2021-12-23

申请号：US17292586

申请日：2019-10-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Chang-Wei CHEN ,  Si-Han ZENG

IPC: G05B19/042

Abstract: A user interface for designing, configuring and/or editing a control flow representing a control strategy associated with a semiconductor manufacturing process, the user interface including: a library of control elements having at least a control element representing a task of simulation and each control element being selectable by a user; a control flow editor configured to organize the control elements into a control flow representing the control strategy; and a communication interface for communicating the control flow to a calculation engine configured to evaluate the control flow.

公开(公告)号：US20180136570A1

公开(公告)日：2018-05-17

申请号：US15869661

申请日：2018-01-12

Applicant: ASML Netherlands B.V.

Inventor： Si-Han ZENG ,  Yue-Lin PENG ,  Jen-Yu FANG ,  Arie Jeffrey DEN BOEF ,  Alexander STRAAIJER ,  Ching-Yi HUNG ,  Patrick WARNAAR

IPC: G03F7/20 ,  G01B11/27 ,  G01B11/24

CPC classification number: G03F7/70633 ,  G01B11/24 ,  G01B11/272

Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

公开(公告)号：US20160313654A1

公开(公告)日：2016-10-27

申请号：US15133866

申请日：2016-04-20

Applicant: ASML Netherlands B.V.

Inventor： Si-Han ZENG ,  Yue-Lin PENG ,  Jen-Yu FANG ,  Arie Jeffrey DEN BOEF ,  Alexander STRAAIJER ,  Ching-Yi HUNG ,  Patrick WARNAAR

IPC: G03F7/20 ,  G01B11/24 ,  G01B11/27

CPC classification number: G03F7/70633 ,  G01B11/24 ,  G01B11/272

Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

Abstract translation: 公开了用于测量光刻工艺的参数的方法，计算机程序和相关联的装置。 该方法包括以下步骤：获得包括与多个第一结构相关的结构不对称性的测量的第一测量，所述多个测量结构不对称中的每一个对应于测量辐射的不同测量组合和至少第一参数的值 ; 获得与多个目标相关的目标不对称性的多个第二测量值，所述多个测量目标不对称中的每一个对应于所述不同测量组合之一，确定描述所述第一测量和所述第二测量之间的关系的关系函数， 对于每个所述测量组合; 根据所述关系函数确定校正重叠值，所述校正重叠值由于至少所述第一结构中的结构不对称而被校正为结构贡献。