公开(公告)号：US11287748B2

公开(公告)日：2022-03-29

申请号：US16965130

申请日：2019-02-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Anton Bernhard Van Oosten ,  Vidya Vaenkatesan ,  James Norman Wiley ,  Reinder Teun Plug

IPC: G03F7/20 ,  G03F1/84

Abstract: A method for inspection of a patterning device. The method includes obtaining (i) patterning device apparatus data of a patterning device making process, (ii) a patterning device substrate map based on the patterning device apparatus data, and (iii) predicted process window limiting pattern locations corresponding to the patterning device based on the patterning device substrate map, and based on the process window limiting pattern locations, guiding a patterning device inspection apparatus to the process window limiting pattern locations for defect inspection.

公开(公告)号：US10884342B2

公开(公告)日：2021-01-05

申请号：US15771585

申请日：2016-10-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Martinus Gerardus Maria Johannes Maassen ,  Reinder Teun Plug ,  Kaustuve Bhattacharyya

IPC: G03F7/20 ,  G06F30/39 ,  G06F119/18

Abstract: A metrology system can be integrated within a lithographic apparatus to provide integrated metrology within the lithographic process. However, this integration can result in a throughput or productivity impact of the whole lithographic apparatus which can be difficult to predict. It is therefore proposed to acquire throughput information associated with a throughput of a plurality of substrates within a lithographic apparatus, the throughput information including a throughput parameter, and predict, using a throughput simulator, a throughput using the throughput parameter as an input parameter. The throughput simulator may be calibrated using the acquired throughput information. The impact of at least one change of a throughput parameter on the throughput of the lithographic apparatus may be predicted using the throughput simulator.