公开(公告)号：US20150294998A1

公开(公告)日：2015-10-15

申请号：US14439481

申请日：2013-10-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Stoyan Nihtianov ,  Haico Victor Kok ,  Martijn Gerard Dominique Wehrens

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/028

CPC classification number: H01L27/1464 ,  G03F7/70558 ,  G03F7/7085 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804

Abstract: A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.

Abstract translation: 一种背面照明传感器，包括支撑衬底，半导体层，其包括光电二极管，所述光电二极管包括设置在所述半导体层的第一表面处的n掺杂半导体的区域，以及p掺杂半导体的区域， n掺杂半导体的区域和p掺杂半导体的区域，以及设置在半导体层的第二表面上的p掺杂保护材料层，其中半导体层的第一表面固定到 支撑衬底。

公开(公告)号：US09331117B2

公开(公告)日：2016-05-03

申请号：US14439481

申请日：2013-10-09

Applicant: ASML Netherlands B.V.

Inventor： Stoyan Nihtianov ,  Haico Victor Kok ,  Martijn Gerard Dominique Wehrens

IPC: H01L21/00 ,  H01L27/146 ,  G03F7/20 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L27/1464 ,  G03F7/70558 ,  G03F7/7085 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804

Abstract: A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.

Abstract translation: 一种背面照明传感器，包括支撑衬底，半导体层，其包括光电二极管，所述光电二极管包括设置在所述半导体层的第一表面处的n掺杂半导体的区域，以及p掺杂半导体的区域， n掺杂半导体的区域和p掺杂半导体的区域，以及设置在半导体层的第二表面上的p掺杂保护材料层，其中半导体层的第一表面固定到 支撑衬底。

公开(公告)号：US09170498B2

公开(公告)日：2015-10-27

申请号：US13786400

申请日：2013-03-05

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus Van De Kerkhof ,  Wilhelmus Petrus De Boeij ,  Hendrikus Robertus Marie Van Greevenbroek ,  Michel François Hubert Klaassen ,  Martijn Gerard Dominique Wehrens ,  Haico Victor Kok ,  Wilhelmus Jacobus Maria Rooijakkers ,  Tammo Uitterdijk

IPC: G03F7/20

CPC classification number: G03F7/70133 ,  G03F7/70566 ,  G03F7/70591 ,  G03F7/7085

Abstract: A lithographic apparatus includes an illumination system, support constructed to support patterning device, a projection system, an interferometric sensor and a detector. The interferometric sensor is designed to measure one or more wavefronts of a radiation beam projected by the projection system from an adjustable polarizer. The interferometric sensor includes a diffractive element disposed at a level of a substrate in the lithographic apparatus and a detector spaced apart from the diffractive element, the diffractive element being arranged to provide shearing interferometry between at least two wavefronts mutually displaced in a direction of shear. The detector is designed to determine, from the wavefront measurements, information on polarization affecting properties of the projection system.

Abstract translation: 光刻设备包括照明系统，构造成支撑图案形成装置的支撑，投影系统，干涉测量传感器和检测器。 干涉测量传感器被设计成测量由可调偏振器投射的投影系统投影的辐射束的一个或多个波前。 所述干涉测量传感器包括设置在所述光刻设备中的基底水平处的衍射元件和与所述衍射元件间隔开的检测器，所述衍射元件被布置成在剪切方向上相互移位的至少两个波前之间提供剪切干涉测量。 该检测器设计用于从波前测量中确定投影系统对偏振影响特性的信息。