Lithographic apparatus, metrology system, and illumination systems with structured illumination

    公开(公告)号:US11789368B2

    公开(公告)日:2023-10-17

    申请号:US17764139

    申请日:2020-09-14

    CPC classification number: G03F7/70191 G03F7/7085 G03F7/70091

    Abstract: A system (500) includes an illumination system (502), a lens element (506), and a detector (504). The illumination system generates a beam of radiation (510) having a first spatial intensity distribution (800) at a pupil plane (528) and a second spatial intensity distribution (900) at a plane of a target (514). The first spatial intensity distribution comprises an annular intensity profile (802) or an intensity profile corresponding to three or more beams. The lens element focuses the beam onto the target. The second spatial intensity distribution is a conjugate of the first intensity distribution and has an intensity profile corresponding to a central beam (902) and one or more side lobes (904) that are substantially isolated from the central beam. The central beam has a beam diameter of approximately 20 microns or less at the target. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation.

    Optical designs of miniaturized overlay measurement system

    公开(公告)号:US12140872B2

    公开(公告)日:2024-11-12

    申请号:US17796640

    申请日:2021-01-21

    Abstract: A compact sensor apparatus having an illumination beam, a beam shaping system, a polarization modulation system, a beam projection system, and a signal detection system. The beam shaping system is configured to shape an illumination beam generated from the illumination system and generate a flat top beam spot of the illumination beam over a wavelength range from 400 nm to 2000 nm. The polarization modulation system is configured to provide tenability of linear polarization state of the illumination beam. The beam projection system is configured to project the flat top beam spot toward a target, such as an alignment mark on a substrate. The signal detection system is configured to collect a signal beam comprising diffraction order sub-beams generated from the target, and measure a characteristic (e.g., overlay) of the target based on the signal beam.

    On chip sensor for wafer overlay measurement

    公开(公告)号:US12066762B2

    公开(公告)日:2024-08-20

    申请号:US17637942

    申请日:2020-08-05

    CPC classification number: G03F7/70633 G02B6/1225 G02B26/0833

    Abstract: A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

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