公开(公告)号：US20210118671A1

公开(公告)日：2021-04-22

申请号：US17072524

申请日：2020-10-16

申请人： ASM IP Holding B.V.

发明人： Oreste Madia ,  Andrea Illiberi ,  Giuseppe Alessio Verni ,  Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/40

摘要： Methods of forming indium germanium zinc oxide (IGeZO) films by vapor deposition are provided. The IGeZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGeZO films comprise an IGeZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase germanium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.

公开(公告)号：US20220139702A1

公开(公告)日：2022-05-05

申请号：US17577073

申请日：2022-01-17

申请人： ASM IP Holding B.V.

发明人： Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC分类号： H01L21/02 ,  H01L29/51 ,  H01L21/28

摘要： A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.

公开(公告)号：US11227763B2

公开(公告)日：2022-01-18

申请号：US16790780

申请日：2020-02-14

申请人： ASM IP Holding B.V.

发明人： Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC分类号： H01L21/02 ,  H01L29/51 ,  H01L21/28

摘要： A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.

公开(公告)号：US20210118672A1

公开(公告)日：2021-04-22

申请号：US17072525

申请日：2020-10-16

申请人： ASM IP Holding B.V.

发明人： Oreste Madia ,  Andrea Illiberi ,  Michael Eugene Givens ,  Tatiana Ivanova ,  Charles Dezelah ,  Varun Sharma

IPC分类号： H01L21/02

摘要： Methods of forming indium gallium zinc oxide (IGZO) films by vapor deposition are provided. The IGZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGZO films comprise an IGZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase gallium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.

公开(公告)号：US20220165575A1

公开(公告)日：2022-05-26

申请号：US17529562

申请日：2021-11-18

申请人： ASM IP Holding B.V.

发明人： Qi Xie ,  Giuseppe Alessio Verni ,  Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens ,  Eric Shero ,  Jiyeon Kim ,  Charles Dezelah ,  Petro Deminskyi ,  Ren-Jie Chang

IPC分类号： H01L21/28 ,  H01L21/02 ,  C23C16/52 ,  C23C16/455

摘要： Methods and systems for depositing threshold voltage shifting layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a threshold voltage shifting layer onto a surface of the substrate.

公开(公告)号：US20210111025A1

公开(公告)日：2021-04-15

申请号：US17065925

申请日：2020-10-08

申请人： ASM IP Holding B.V.

发明人： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC分类号： H01L21/033 ,  H01L21/027

摘要： Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US20200266055A1

公开(公告)日：2020-08-20

申请号：US16790780

申请日：2020-02-14

申请人： ASM IP Holding B.V.

发明人： Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L29/51

摘要： A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.