Abstract:
A system and method for depositing a film within a reaction chamber are disclosed. An exemplary system includes a temperature measurement device, such as a pyrometer, to measure an exterior wall surface of the reaction chamber. A temperature of the exterior wall surface can be controlled to mitigate cleaning or etching of an interior wall surface of the reaction chamber.
Abstract:
A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.
Abstract:
A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.
Abstract:
A lift pin and a substrate support assembly and reactor including the lift pin are disclosed. The lift pin includes first section comprising a material having a first transparency and a second section comprising a material having a second transparency. The lift pin can provide improved temperature uniformity across substrate support assembly including the lift pin during substrate processing.
Abstract:
A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.
Abstract:
A substrate tray, a susceptor assembly including a substrate tray, and a reactor including a substrate tray and/or susceptor assembly are disclosed. The substrate tray is configured to retain a substrate during processing and can be formed of a substantially non-reactive material. The substrate tray can be received by a susceptor, formed of another material, to form the susceptor assembly.
Abstract:
A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.
Abstract:
An improved exhaust system for a gas-phase reactor and a reactor and system including the exhaust system are disclosed. The exhaust system includes a channel fluidly coupled to an exhaust plenum. The improved exhaust system allows operation of a gas-phase reactor with desired flow characteristics while taking up relatively little space within a reaction chamber.
Abstract:
A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature.
Abstract:
A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.