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公开(公告)号:US20230069359A1
公开(公告)日:2023-03-02
申请号:US18045419
申请日:2022-10-10
申请人: ASM IP HOLDING B.V.
发明人: Shuyang Zheng , Jereld Lee Winkler , Ankit Kimtee , Eric James Shero , Mimoh Kwatra , Dinkar Nandwana , Todd Robert Dunn , Carl Louis White
IPC分类号: C23C16/455
摘要: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. The manifold may further comprise an insulator cap disposed about the first block or the second block. The semiconductor processing device may comprise at least three valve blocks mounted to the second block so that a precursor backflow is prevented. Heater rod(s) can extend through the second block to a location adjacent the first block.
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公开(公告)号:US20210210373A1
公开(公告)日:2021-07-08
申请号:US17140661
申请日:2021-01-04
申请人: ASM IP Holding B.V.
发明人: Govindarajasekhar Singu , Dinkar Nandwana , Todd Robert Dunn , Shankar Swaminathan , Bhushan Zope , Carl Louis White
IPC分类号: H01L21/687 , H01L21/683
摘要: A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space comprised in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.
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公开(公告)号:US20210214846A1
公开(公告)日:2021-07-15
申请号:US17149023
申请日:2021-01-14
申请人: ASM IP HOLDING B.V.
发明人: Dinkar Nandwana , Carl Louis White , Eric James Shero , William George Petro , Herbert Terhorst , Gnyanesh Trivedi , Mark Olstad , Ankit Kimtee , Kyle Fondurulia , Michael Schmotzer , Jereld Lee Winkler
IPC分类号: C23C16/455 , C23C16/458
摘要: The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber size and decreases cycling time. Decreased cycling time can improve throughput and decrease costs.
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公开(公告)号:US20230088313A1
公开(公告)日:2023-03-23
申请号:US17948674
申请日:2022-09-20
申请人: ASM IP Holding, B.V.
发明人: Herbert Terhorst , Dinkar Nandwana , Eric Shero , Allen D'Ambra , Jessica Akemi Cimada da Silva , Daner Abdula
摘要: A gas distribution system having a first plurality of apertures to supply a gas source to a reaction chamber and a second plurality of apertures surrounding the first plurality of apertures and configured to remove the gas from the reaction chamber. In one embodiment, the second plurality of apertures may gradually increase in diameter as the distance from a main exhaust channel increases. Alternatively, or in addition, the angle spacing between adjacent apertures may gradually decrease as the distance from the main exhaust channel increases.
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公开(公告)号:US20200299836A1
公开(公告)日:2020-09-24
申请号:US16813527
申请日:2020-03-09
申请人: ASM IP HOLDING B.V.
IPC分类号: C23C16/44 , C23C16/455 , H01L21/67
摘要: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.
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公开(公告)号:US11492701B2
公开(公告)日:2022-11-08
申请号:US16813527
申请日:2020-03-09
申请人: ASM IP HOLDING B.V.
IPC分类号: C23C16/44 , H01L21/67 , C23C16/455 , C23C16/54
摘要: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.
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公开(公告)号:US20220168787A1
公开(公告)日:2022-06-02
申请号:US17537567
申请日:2021-11-30
申请人: ASM IP Holding B.V.
发明人: Dinkar Nandwana , Allen D'Ambra , Dinh Tran , Ankit Kimtee , Eric Shero
摘要: Cleaning fixtures for cleaning a showerhead assembly are disclosure. The cleaning fixtures include: a fixture body incorporating three or more cavities, each cavity being separate from an adjacent cavity by a partition, and a number of channels associated with each cavity for fluidly connecting the cavities with an upper surface of the fixture body.
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公开(公告)号:US20210118668A1
公开(公告)日:2021-04-22
申请号:US17074887
申请日:2020-10-20
申请人: ASM IP HOLDING B.V.
发明人: Dinkar Nandwana , Eric James Shero , Carl Louis White , Todd Robert Dunn , William George Petro , Jereld Lee Winkler , Aniket Chitale
IPC分类号: H01L21/02 , C23C16/455
摘要: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.
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