公开(公告)号：US20240379469A1

公开(公告)日：2024-11-14

申请号：US18779953

申请日：2024-07-22

Applicant: Applied Materials, Inc.

Inventor： Lei LIAN ,  Quentin WALKER ,  Zefang WANG ,  Shinichi KOSEKI

IPC: H01L21/66 ,  G01J1/18 ,  H01J37/32

Abstract: Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (

公开(公告)号：US20230268235A1

公开(公告)日：2023-08-24

申请号：US17675900

申请日：2022-02-18

Applicant: Applied Materials, Inc.

Inventor： Lei LIAN ,  Quentin WALKER ,  Zefang WANG ,  Shinichi KOSEKI

IPC: H01L21/66 ,  H01J37/32 ,  G01J1/18

CPC classification number: H01L22/26 ,  H01J37/32963 ,  G01J1/18 ,  H01J2237/334 ,  H01J2237/24507

Abstract: Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (

公开(公告)号：US20210320012A1

公开(公告)日：2021-10-14

申请号：US16846869

申请日：2020-04-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Daisuke SHIMIZU ,  Taiki HATAKEYAMA ,  Shinichi KOSEKI ,  Sean S. KANG ,  Jairaj Joseph PAYYAPILLY ,  Hikaru WATANABE

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/033

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.