公开(公告)号：US20240379469A1

公开(公告)日：2024-11-14

申请号：US18779953

申请日：2024-07-22

Applicant: Applied Materials, Inc.

Inventor： Lei LIAN ,  Quentin WALKER ,  Zefang WANG ,  Shinichi KOSEKI

IPC: H01L21/66 ,  G01J1/18 ,  H01J37/32

Abstract: Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (

公开(公告)号：US20230268235A1

公开(公告)日：2023-08-24

申请号：US17675900

申请日：2022-02-18

Applicant: Applied Materials, Inc.

Inventor： Lei LIAN ,  Quentin WALKER ,  Zefang WANG ,  Shinichi KOSEKI

IPC: H01L21/66 ,  H01J37/32 ,  G01J1/18

CPC classification number: H01L22/26 ,  H01J37/32963 ,  G01J1/18 ,  H01J2237/334 ,  H01J2237/24507

Abstract: Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (