公开(公告)号：US20220328285A1

公开(公告)日：2022-10-13

申请号：US17496427

申请日：2021-10-07

Applicant: Applied Materials, Inc.

Inventor： Abdullah ZAFAR ,  William John DURAND ,  Xinyuan CHONG ,  Kenric CHOI ,  Weize HU ,  Kelvin CHAN ,  Amir BAYATI ,  Michelle SANPEDRO ,  Philip A. KRAUS ,  Adolph Miller ALLEN

IPC: H01J37/32 ,  G01N21/3504 ,  G01N33/00 ,  C23C16/455 ,  C23C16/52

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a gas supply configured for use with a processing chamber includes an ampoule that stores a precursor and comprises an input to receive a carrier gas and an output to provide a mixture of the carrier gas and the precursor to the processing chamber and a sensor assembly comprising a detector and an infrared source operably connected to an outside of an enclosure, through which the mixture flows, and a gas measurement volume disposed within the enclosure and along an inner wall thereof so that a concentration of the precursor in the mixture can be measured by the detector and transmitted to a controller.

公开(公告)号：US20230253186A1

公开(公告)日：2023-08-10

申请号：US18133216

申请日：2023-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Hanhong CHEN ,  Arkaprava DAN ,  Joseph AUBUCHON ,  Kyoung Ha KIM ,  Philip A. KRAUS

IPC: H01J37/32 ,  C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  C23C16/511

CPC classification number: H01J37/32201 ,  C23C16/34 ,  C23C16/511 ,  H01L21/28568 ,  H01L21/76841 ,  H01J2237/3321

Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.

公开(公告)号：US20180166249A1

公开(公告)日：2018-06-14

申请号：US15834939

申请日：2017-12-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid DORF ,  Travis KOH ,  Olivier LUERE ,  Olivier JOUBERT ,  Philip A. KRAUS ,  Rajinder DHINDSA ,  JAMES HUGH ROGERS

IPC: H01J37/08 ,  H01J37/248

CPC classification number: H01J37/08 ,  H01J37/248

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.