公开(公告)号：US11378511B2

公开(公告)日：2022-07-05

申请号：US16690576

申请日：2019-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Gang Grant Peng ,  Robert Douglas Mikkola ,  David Britz ,  Lance Scudder ,  David W. Groechel

IPC: G01N17/02 ,  G01N27/02 ,  G01N27/00 ,  G01N17/00

Abstract: A method for detecting corrosion on a conductive object includes submerging a surface of the conductive object at least partially in an aqueous solution, flowing current through the surface of the conductive object by forming a voltage differential across the surface, varying the voltage differential across the surface while monitoring the current through the surface of the conductive object, determining a total charge corresponding to a corrosion level of the surface of the conductive object based on current versus voltage levels. The corrosion level may further be utilized in selecting a cleaning process to remediate the corrosion of the surface based on the corrosion level and in applying a protective corrosion barrier to on at least part of the surface after the cleaning process.

公开(公告)号：US11348783B2

公开(公告)日：2022-05-31

申请号：US16562002

申请日：2019-09-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Denis Ivanov ,  Lance Scudder ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/02 ,  H05B6/64

Abstract: Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.

公开(公告)号：US20210074539A1

公开(公告)日：2021-03-11

申请号：US16562002

申请日：2019-09-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Denis Ivanov ,  Lance Scudder ,  Dmitry Lubomirsky

IPC: H01L21/02 ,  H01J37/32

Abstract: Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.

公开(公告)号：US11355317B2

公开(公告)日：2022-06-07

申请号：US16218848

申请日：2018-12-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Lance Scudder ,  David Britz ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

IPC: H01J37/32 ,  H01L21/67

Abstract: Plasma is generated in a semiconductor process chamber by a plurality of microwave inputs with slow or fast rotation. Radial uniformity of the plasma is controlled by regulating the power ratio of a center-high mode and an edge-high mode of the plurality of microwave inputs into a microwave cavity. The radial uniformity of the generated plasma in a plasma chamber is attained by adjusting the power ratio for the two modes without inputting time-splitting parameters for each mode.