公开(公告)号：US20150206777A1

公开(公告)日：2015-07-23

申请号：US14673320

申请日：2015-03-30

Applicant: APPLIED MATERIALS, INC.

Inventor： AGUS TJANDRA ,  CHRISTOPHER S. OLSEN ,  JOHANES SWENBERG ,  LARA HAWRYLCHAK

IPC: H01L21/67

CPC classification number: H01L21/67098 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.

Abstract translation: 本文提供了用于改善处理室中金属选择性氧化的方法和装置。 在一些实施例中，氧化设置在具有由一个或多个室壁限定的处理容积的处理室中的衬底的第一表面的方法可以包括将衬底暴露于氧化气体以氧化第一表面; 并且主动地加热所述一个或多个室壁中的至少一个，以将所述一个或多个室壁的温度升高至至少水的露点的第一温度，同时将所述衬底暴露于所述氧化气体。

公开(公告)号：US20140099795A1

公开(公告)日：2014-04-10

申请号：US14044090

申请日：2013-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： JEFFREY TOBIN ,  BERNARD L. HWANG ,  CANFENG LAI ,  LARA HAWRYLCHAK ,  WEI LIU ,  JOHANES SWENBERG

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6831

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.

Abstract translation: 提供了用于处理基板的方法和装置。 在一些实施例中，处理具有第一层的衬底的方法可以包括将衬底支撑件顶部放置在具有施加到其上的偏置功率的离子屏蔽体下方的处理室的较低处理容积内，离子屏蔽包括基本平坦的 平行于衬底支撑件支撑的构件和穿过平坦构件形成的多个孔，其中孔径与厚度平坦构件的比例为约10:1-1:10; 将处理气体流入离子屏蔽物上方的上部处理体积; 从所述上加工容积内的工艺气体形成等离子体; 用通过离子屏蔽的中性自由基处理第一层; 并且在处理第一层的同时将基底加热至高达约550摄氏度的温度。

公开(公告)号：US20130210240A1

公开(公告)日：2013-08-15

申请号：US13764137

申请日：2013-02-11

Applicant: APPLIED MATERIALS, INC.

Inventor： AGUS TJANDRA ,  CHRISTOPHER S. OLSEN ,  JOHANES SWENBERG ,  LARA HAWRYLCHAK

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/67098 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.

公开(公告)号：US20150332941A1

公开(公告)日：2015-11-19

申请号：US14719546

申请日：2015-05-22

Applicant: APPLIED MATERIALS, INC.

Inventor： JEFFREY TOBIN ,  BERNARD L. HWANG ,  CANFENG LAI ,  LARA HAWRYLCHAK ,  WEI LIU ,  JOHANES SWENBERG

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6831

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.

Abstract translation: 提供了用于处理基板的方法和装置。 在一些实施例中，处理具有第一层的衬底的方法可以包括将衬底支撑件顶部放置在具有施加到其上的偏置功率的离子屏蔽体下方的处理室的较低处理容积中，离子屏蔽包括基本平坦的 平行于衬底支撑件支撑的构件和穿过平坦构件形成的多个孔，其中孔径与厚度平坦构件的比例为约10:1-1:10; 将处理气体流入离子屏蔽物上方的上部处理体积; 从所述上加工容积内的工艺气体形成等离子体; 用通过离子屏蔽的中性自由基处理第一层; 并且在处理第一层的同时将基底加热至高达约550摄氏度的温度。