公开(公告)号：US20150206777A1

公开(公告)日：2015-07-23

申请号：US14673320

申请日：2015-03-30

Applicant: APPLIED MATERIALS, INC.

Inventor： AGUS TJANDRA ,  CHRISTOPHER S. OLSEN ,  JOHANES SWENBERG ,  LARA HAWRYLCHAK

IPC: H01L21/67

CPC classification number: H01L21/67098 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.

Abstract translation: 本文提供了用于改善处理室中金属选择性氧化的方法和装置。 在一些实施例中，氧化设置在具有由一个或多个室壁限定的处理容积的处理室中的衬底的第一表面的方法可以包括将衬底暴露于氧化气体以氧化第一表面; 并且主动地加热所述一个或多个室壁中的至少一个，以将所述一个或多个室壁的温度升高至至少水的露点的第一温度，同时将所述衬底暴露于所述氧化气体。

公开(公告)号：US20130210240A1

公开(公告)日：2013-08-15

申请号：US13764137

申请日：2013-02-11

Applicant: APPLIED MATERIALS, INC.

Inventor： AGUS TJANDRA ,  CHRISTOPHER S. OLSEN ,  JOHANES SWENBERG ,  LARA HAWRYLCHAK

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/67098 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.