公开(公告)号：US20160189936A1

公开(公告)日：2016-06-30

申请号：US14586153

申请日：2014-12-30

申请人： Applied Materials, Inc.

发明人： Bonnie T. CHIA ,  Cheng-Hsiung TSAI

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32651 ,  C23C16/45563 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32477

摘要： Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.

摘要翻译： 半导体基板等离子体处理装置。 该装置的方面包括具有布置在上屏蔽件中心的气体扩散器的上屏蔽。 气体扩散器和上部屏蔽层以加工方式将工艺气体进入处理室。 上护罩的轮廓促进了工艺气体的径向膨胀和从衬底的表面蚀刻的材料的径向行进。 上屏蔽的曲率将蚀刻的材料引导到下屏蔽层，同时减少了在上屏蔽上沉积蚀刻的材料。 下屏蔽还包括弯曲表面，其将蚀刻的材料引向槽，使得蚀刻的材料能够以较低的沉积在下屏蔽上从处理室中排出。

公开(公告)号：US20200230782A1

公开(公告)日：2020-07-23

申请号：US16838848

申请日：2020-04-02

申请人： APPLIED MATERIALS, INC.

发明人： Pulkit AGARWAL ,  Bonnie T. CHIA ,  Song-Moon SUH ,  Cheng-Hsiung TSAI ,  Dhritiman Subha KASHYAP ,  Xiaoxiong YUAN ,  Eric RIESKE

IPC分类号： B24C1/00 ,  B24C3/32 ,  H01L21/67

摘要： Embodiments of methods and apparatus for cleaning contaminants from a substrate are disclosed herein. In some embodiments, a substrate cleaning apparatus includes: a substrate support to support a substrate along an edge of the substrate, wherein the substrate further includes a first side and an opposing second side having contaminants disposed on the second side; a showerhead disposed a first distance of about 1.5 mm to about 4.4 mm opposite the substrate support and facing the first side of the substrate; and one or more nozzles disposed a second distance of about 1 inch to about 2 inches beneath the substrate support to discharge a mixture of solid and gaseous carbon dioxide toward the contaminants on the second side of the substrate, and wherein the one or more nozzles have an angle of about 20 to about 40 degrees.

公开(公告)号：US20180130644A1

公开(公告)日：2018-05-10

申请号：US15864074

申请日：2018-01-08

申请人： Applied Materials, Inc.

发明人： Bonnie T. CHIA ,  Cheng Hsiung TSAI

IPC分类号： H01J37/32 ,  C23C16/455

摘要： Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.

公开(公告)号：US20160322239A1

公开(公告)日：2016-11-03

申请号：US14749209

申请日：2015-06-24

申请人： APPLIED MATERIALS, INC.

发明人： Pulkit AGARWAL ,  Bonnie T. CHIA ,  Song-Moon SUH ,  Cheng-Hsiung TSAI ,  Dhritiman Subha KASHYAP ,  Xiaoxiong YUAN ,  Eric RIESKE

IPC分类号： H01L21/67 ,  B24C1/00

CPC分类号： B24C1/003 ,  B24C3/322 ,  H01L21/67028

摘要： Embodiments of methods and apparatus for cleaning contaminants from a substrate are disclosed herein. In some embodiments, a substrate cleaning apparatus includes: a substrate support to support a substrate along an edge of the substrate, wherein the substrate further includes a first side and an opposing second side having contaminants disposed on the second side; a showerhead disposed a first distance of about 1.5 mm to about 4.4 mm opposite the substrate support and facing the first side of the substrate; and one or more nozzles disposed a second distance of about 1 inch to about 2 inches beneath the substrate support to discharge a mixture of solid and gaseous carbon dioxide toward the contaminants on the second side of the substrate, and wherein the one or more nozzles have an angle of about 20 to about 40 degrees.

摘要翻译： 本文公开了用于从衬底清洁污染物的方法和设备的实施例。 在一些实施例中，基板清洁装置包括：基板支撑件，用于沿着基板的边缘支撑基板，其中所述基板还包括第一侧和相对的第二侧，其具有设置在所述第二侧上的污染物; 喷头，其布置在与基板支撑件相对的大约1.5mm至大约4.4mm的第一距离处，并面向基板的第一侧; 以及一个或多个喷嘴，其在基板支撑件下方设置约1英寸至约2英寸的第二距离，以将固体和气态二氧化碳的混合物朝向基板的第二侧上的污染物排出，并且其中所述一个或多个喷嘴具有 约20至约40度的角度。