公开(公告)号：US11245052B2

公开(公告)日：2022-02-08

申请号：US16495913

申请日：2018-03-21

申请人： 3D-Micromac AG

发明人： Sven Albert ,  René Boettcher ,  Alexander Boehm ,  Mike Lindner ,  Thomas Schmidt

IPC分类号： H01L33/00 ,  B32B43/00 ,  H01L21/67 ,  H01L21/683 ,  H01L21/66

摘要： A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.

公开(公告)号：US20220216364A1

公开(公告)日：2022-07-07

申请号：US17590313

申请日：2022-02-01

申请人： 3D-Micromac AG

发明人： Sven Albert ,  René Boettcher ,  Alexander Boehm ,  Mike Lindner ,  Thomas Schmidt

IPC分类号： H01L33/00 ,  B32B43/00 ,  H01L21/67 ,  H01L21/683 ,  H01L21/66

摘要： A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.

公开(公告)号：US11799055B2

公开(公告)日：2023-10-24

申请号：US17590313

申请日：2022-02-01

申请人： 3D-Micromac AG

发明人： Sven Albert ,  René Boettcher ,  Alexander Boehm ,  Mike Lindner ,  Thomas Schmidt

IPC分类号： H01L33/00 ,  B32B43/00 ,  H01L21/67 ,  H01L21/683 ,  H01L21/66

CPC分类号： H01L33/0093 ,  B32B43/006 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6838 ,  H01L22/12 ,  H01L33/007 ,  B32B2457/14

摘要： A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.