公开(公告)号：US08551873B2

公开(公告)日：2013-10-08

申请号：US13610142

申请日：2012-09-11

Applicant: Yusuke Onuki ,  Takehito Okabe ,  Hideaki Ishino

Inventor： Yusuke Onuki ,  Takehito Okabe ,  Hideaki Ishino

IPC: H01L21/28

CPC classification number: H01L21/28247 ,  H01L27/14649 ,  H01L27/14689 ,  H01L29/6656 ,  H01L29/7833

Abstract: A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film.

Abstract translation: 一种制造具有MOS晶体管的半导体器件的方法，包括在形成在半导体衬底上的第一绝缘膜上形成栅电极材料层，在栅电极材料层上形成蚀刻掩模，通过图案化栅电极形成栅电极 材料层，使得在对栅电极材料层进行图案化的同时形成保护栅电极的侧面的至少下部和与侧面相邻的第一绝缘膜的一部分的保护膜， 在其上形成有栅电极的半导体衬底上形成第二绝缘膜，并在第二绝缘膜上形成层间绝缘膜。

公开(公告)号：US08501520B2

公开(公告)日：2013-08-06

申请号：US12697420

申请日：2010-02-01

Applicant: Katsunori Hirota ,  Akira Ohtani ,  Kazuaki Tashiro ,  Yusuke Onuki ,  Takanori Watanabe ,  Takeshi Ichikawa

Inventor： Katsunori Hirota ,  Akira Ohtani ,  Kazuaki Tashiro ,  Yusuke Onuki ,  Takanori Watanabe ,  Takeshi Ichikawa

IPC: H01L51/40

CPC classification number: H01L27/14689 ,  H01L21/26513 ,  H01L21/324 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14698

Abstract: A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.

Abstract translation: 一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

公开(公告)号：US20110025896A1

公开(公告)日：2011-02-03

申请号：US12866807

申请日：2009-03-13

Applicant: Yuichiro Yamashita ,  Yusuke Onuki

Inventor： Yuichiro Yamashita ,  Yusuke Onuki

IPC: H04N5/335

CPC classification number: H04N5/378 ,  H04N5/335 ,  H04N5/343 ,  H04N5/353 ,  H04N5/3532

Abstract: A driving method for a solid-state imaging apparatus including a plurality of pixels is provided. A potential of the electric charge accumulated in an accumulating portion is lower than a potential of a first transferring portion for connecting a photoelectric conversion element to the accumulating portion for accumulating an electric charge. The driving method includes: a first driving mode setting a start and an end of an operation of accumulating the electric charge in each of the plurality of pixels common for the plurality of pixels; and a second driving mode setting the start and the end of the operation of accumulating the electric charge in each of the plurality of pixels common for the pixels in each row.

Abstract translation: 提供了包括多个像素的固体摄像装置的驱动方法。 累积在积存部分中的电荷的电位低于用于将光电转换元件连接到用于积蓄电荷的累积部分的第一转印部分的电位。 驱动方法包括：第一驱动模式，设定在多个像素共有的多个像素中的每一个中累积电荷的操作的开始和结束; 以及第二驱动模式，其设定在每行中的像素共有的多个像素中的每一个中累积电荷的操作的开始和结束。

公开(公告)号：US20100203667A1

公开(公告)日：2010-08-12

申请号：US12697420

申请日：2010-02-01

Applicant: Katsunori Hirota ,  Akira Ohtani ,  Kazuaki Tashiro ,  Yusuke Onuki ,  Takanori Watanabe ,  Takeshi Ichikawa

Inventor： Katsunori Hirota ,  Akira Ohtani ,  Kazuaki Tashiro ,  Yusuke Onuki ,  Takanori Watanabe ,  Takeshi Ichikawa

IPC: H01L31/18 ,  H01L21/265

CPC classification number: H01L27/14689 ,  H01L21/26513 ,  H01L21/324 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14698

Abstract: A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.

Abstract translation: 一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

公开(公告)号：US08860862B2

公开(公告)日：2014-10-14

申请号：US13473442

申请日：2012-05-16

Applicant: Masahiro Kobayashi ,  Yuichiro Yamashita ,  Yusuke Onuki

Inventor： Masahiro Kobayashi ,  Yuichiro Yamashita ,  Yusuke Onuki

IPC: H04N3/14 ,  H04N9/04 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374

Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.

Abstract translation: 固态摄像装置包括全部设置在半导体衬底上的光电转换单元，电荷存储单元和浮动扩散单元。 固体摄像装置还包括设置在半导体衬底上并在光电转换单元和电荷存储单元之间延伸的第一栅电极，以及设置在半导体衬底上并在电荷存储单元和浮置电极之间延伸的第二栅电极 扩散单元 固体摄像装置还包括遮光构件，其包括第一部分和第二部分，其中第一部分设置在电荷存储单元上方，并且至少在第一栅电极或第二栅极上，第二部分 部分设置在第一栅电极和第二栅电极之间，使得第二部分从第一部分朝向半导体衬底的表面延伸。

公开(公告)号：US08736734B2

公开(公告)日：2014-05-27

申请号：US13360117

申请日：2012-01-27

Applicant: Yusuke Onuki ,  Yuichiro Yamashita

Inventor： Yusuke Onuki ,  Yuichiro Yamashita

IPC: H04N5/335

CPC classification number: H04N5/3592 ,  H01L27/14609 ,  H04N5/353 ,  H04N5/374

Abstract: A solid-state imaging apparatus comprises a pixel portion including a plurality of pixels, wherein each pixel including a photoelectric conversion portion, an accumulation portion for accumulating the charge, a first transfer portion connecting the photoelectric conversion portion to the accumulation portion, a second transfer portion connecting the accumulation portion to a floating diffusion portion, and a third transfer portion connecting the photoelectric conversion portion to a power source, and wherein, from a state where no potential barrier is formed in the second transfer portion, a potential barrier is formed in the second transfer portion under a condition that a potential barrier is formed in the first transfer portion and no potential barrier is formed in the third transfer portion, and then a potential barrier is formed in the third transfer portion, thereby the operation of accumulating charges in the pixels is started.

Abstract translation: 固体摄像装置包括像素部分，其包括多个像素，其中每个像素包括光电转换部分，用于累积电荷的累加部分，将光电转换部分连接到累积部分的第一传送部分，第二传输 将所述累积部分连接到浮动扩散部分的部分，以及将所述光电转换部分连接到电源的第三传送部分，并且其中，从在所述第二传送部分中没有形成势垒的状态，形成势垒 第二转印部分在第一转印部分中形成势垒并且在第三转印部分中没有形成势垒的条件下形成第二转印部分，然后在第三转印部分中形成势垒，由此在第 像素启动。

公开(公告)号：US20130089975A1

公开(公告)日：2013-04-11

申请号：US13610142

申请日：2012-09-11

Applicant: Yusuke Onuki ,  Takehito Okabe ,  Hideaki Ishino

Inventor： Yusuke Onuki ,  Takehito Okabe ,  Hideaki Ishino

IPC: H01L21/28

CPC classification number: H01L21/28247 ,  H01L27/14649 ,  H01L27/14689 ,  H01L29/6656 ,  H01L29/7833

Abstract: A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film.

Abstract translation: 一种制造具有MOS晶体管的半导体器件的方法，包括在形成在半导体衬底上的第一绝缘膜上形成栅电极材料层，在栅电极材料层上形成蚀刻掩模，通过图案化栅电极形成栅电极 材料层，使得在对栅电极材料层进行图案化的同时形成保护栅电极的侧面的至少下部和与侧面相邻的第一绝缘膜的一部分的保护膜， 在其上形成有栅电极的半导体衬底上形成第二绝缘膜，并在第二绝缘膜上形成层间绝缘膜。

公开(公告)号：US20120300106A1

公开(公告)日：2012-11-29

申请号：US13473442

申请日：2012-05-16

Applicant: Masahiro Kobayashi ,  Yuichiro Yamashita ,  Yusuke Onuki

Inventor： Masahiro Kobayashi ,  Yuichiro Yamashita ,  Yusuke Onuki

IPC: H04N5/335

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374

Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.

Abstract translation: 固态摄像装置包括全部设置在半导体衬底上的光电转换单元，电荷存储单元和浮动扩散单元。 固体摄像装置还包括设置在半导体衬底上并在光电转换单元和电荷存储单元之间延伸的第一栅电极，以及设置在半导体衬底上并在电荷存储单元和浮置电极之间延伸的第二栅电极 扩散单元 固体摄像装置还包括遮光构件，其包括第一部分和第二部分，其中第一部分设置在电荷存储单元上方，并且至少在第一栅电极或第二栅极上，第二部分 部分设置在第一栅电极和第二栅电极之间，使得第二部分从第一部分朝向半导体衬底的表面延伸。

公开(公告)号：US08115848B2

公开(公告)日：2012-02-14

申请号：US12437821

申请日：2009-05-08

Applicant: Yusuke Onuki ,  Yuichiro Yamashita

Inventor： Yusuke Onuki ,  Yuichiro Yamashita

IPC: H04N5/335

CPC classification number: H04N5/3592 ,  H01L27/14609 ,  H04N5/353 ,  H04N5/374

Abstract: A solid-state imaging apparatus comprises a pixel portion including a plurality of pixels, wherein each pixel including a photoelectric conversion portion, an accumulation portion for accumulating the charge, a first transfer portion connecting the photoelectric conversion portion to the accumulation portion, a second transfer portion connecting the accumulation portion to a floating diffusion portion, and a third transfer portion connecting the photoelectric conversion portion to a power source, and wherein, from a state where no potential barrier is formed in the second transfer portion, a potential barrier is formed in the second transfer portion under a condition that a potential barrier is formed in the first transfer portion and no potential barrier is formed in the third transfer portion, and then a potential barrier is formed in the third transfer portion, thereby the operation of accumulating charges in the pixels is started.

Abstract translation: 固体摄像装置包括像素部分，其包括多个像素，其中每个像素包括光电转换部分，用于累积电荷的累加部分，将光电转换部分连接到累积部分的第一传送部分，第二传输 将所述累积部分连接到浮动扩散部分的部分，以及将所述光电转换部分连接到电源的第三传送部分，并且其中，从在所述第二传送部分中没有形成势垒的状态，形成势垒 第二转印部分在第一转印部分中形成势垒并且在第三转印部分中没有形成势垒的条件下形成第二转印部分，然后在第三转印部分中形成势垒，由此在第 像素启动。

公开(公告)号：US20110084316A1

公开(公告)日：2011-04-14

申请号：US12899404

申请日：2010-10-06

Applicant: Yuichiro Yamashita ,  Masahiro Kobayashi ,  Yusuke Onuki

Inventor： Yuichiro Yamashita ,  Masahiro Kobayashi ,  Yusuke Onuki

IPC: H01L27/148 ,  H01L31/18

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

Abstract: A pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. A second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region is disposed below the second semiconductor region. An impurity concentration of the third semiconductor region is higher than the impurity concentration of the first semiconductor region.

Abstract translation: 根据本发明的拾取装置包括光电转换部分，被配置为包括第一半导体区域的电荷保持部分和被配置为包括控制电荷保持部分和感测节点之间的电位的转移栅电极的转移部分 。 第二半导体区域设置在控制电极和传输栅电极之间的半导体区域的表面上。 第三半导体区域设置在第二半导体区域的下方。 第三半导体区域的杂质浓度高于第一半导体区域的杂质浓度。