公开(公告)号：US20080122341A1

公开(公告)日：2008-05-29

申请号：US10587029

申请日：2005-01-20

申请人： Masahiro Orita ,  Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Hiroaki Yanagita ,  Morihiro Niimi ,  Yuki Tani ,  Misaki Hatsuda

发明人： Masahiro Orita ,  Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Hiroaki Yanagita ,  Morihiro Niimi ,  Yuki Tani ,  Misaki Hatsuda

IPC分类号： H01J1/63

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/08 ,  H01L2924/0002 ,  Y10T428/256 ,  H01L2924/00

摘要： A light emitting device having practical light emission characteristics is obtained without epitaxial growth.A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

摘要翻译： 获得具有实际发光特性的发光器件，而不需外延生长。 本发明的量子点分散发光器件包括基板11，电子注入电极12，空穴注入电极14和与两个电极接触的无机发光层13。 无机发光层13含有双极性无机半导体材料和作为发光中心分散在双极性无机半导体材料中的纳米晶体15，并且被配置为能够在与电子注入电极和/或电子注入电极的界面处发光 空穴注入电极，与其外延关系。

公开(公告)号：US20060043380A1

公开(公告)日：2006-03-02

申请号：US10505051

申请日：2003-02-18

申请人： Kawazoe Hiroshi ,  Satoshi Kobayashi ,  Yuki Tani ,  Hiroaki Yanagita

发明人： Kawazoe Hiroshi ,  Satoshi Kobayashi ,  Yuki Tani ,  Hiroaki Yanagita

IPC分类号： H01L33/00

CPC分类号： H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

摘要： A theme is to provide a field-effect light-emitting device that can obtain a long-term reliability and broaden a selectivity of emission wavelength. The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

摘要翻译： 主题是提供可以获得长期可靠性并扩大发射波长的选择性的场效应发光器件。 本申请的发明是一种场效应晶体管型发光器件，其具有电子注入电极，即源电极，空穴注入电极，即漏电极，设置在源电极和漏电极之间的发射有源元件 以及与两个电极接触的场施加电极，即用于在发射有源部件中诱发电子和空穴的场施加电极，其经由电绝缘部件或绝缘间隙设置在发射有源部件附近 。 发射有源部件由具有电子传输性和空穴传输性的无机半导体材料制成。

公开(公告)号：US07880377B2

公开(公告)日：2011-02-01

申请号：US10587029

申请日：2005-01-20

申请人： Masahiro Orita ,  Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Hiroaki Yanagita ,  Morihiro Niimi ,  Yuki Tani ,  Misaki Hatsuda

发明人： Masahiro Orita ,  Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Hiroaki Yanagita ,  Morihiro Niimi ,  Yuki Tani ,  Misaki Hatsuda

IPC分类号： H05B33/14 ,  B32B5/16

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/08 ,  H01L2924/0002 ,  Y10T428/256 ,  H01L2924/00

摘要： A light emitting device having practical light emission characteristics is obtained without epitaxial growth.A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

摘要翻译： 获得具有实际发光特性的发光器件，而不需外延生长。 本发明的量子点分散发光器件包括基板11，电子注入电极12，空穴注入电极14和与两个电极接触的无机发光层13。 无机发光层13含有双极性无机半导体材料和作为发光中心分散在双极性无机半导体材料中的纳米晶体15，并且被配置为能够在与电子注入电极和/或电子注入电极的界面处发光 空穴注入电极，与其外延关系。

公开(公告)号：US07897976B2

公开(公告)日：2011-03-01

申请号：US10505051

申请日：2003-02-18

申请人： Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Yuki Tani ,  Hiroaki Yanagita

发明人： Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Yuki Tani ,  Hiroaki Yanagita

IPC分类号： H01L27/15 ,  H01L29/73

CPC分类号： H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

摘要翻译： 本申请的发明是一种场效应晶体管型发光器件，其具有电子注入电极，即源电极，空穴注入电极，即漏电极，设置在源电极和漏电极之间的发射有源元件 以及与两个电极接触的场施加电极，即用于在发射有源部件中诱发电子和空穴的场施加电极，其经由电绝缘部件或绝缘间隙设置在发射有源部件附近 。 发射有源部件由具有电子传输性和空穴传输性的无机半导体材料制成。