公开(公告)号：US20130043513A1

公开(公告)日：2013-02-21

申请号：US13213211

申请日：2011-08-19

Applicant: Liang-An HUANG ,  Yu-Chun Huang ,  Chin-Fu Lin ,  Yu-Ciao Lin ,  Yu-Chieh Lin ,  Hsin-Liang Liu ,  Chun-Hung Cheng ,  Yuan-Cheng Yang ,  Yau-Kae Sheu

Inventor： Liang-An HUANG ,  Yu-Chun Huang ,  Chin-Fu Lin ,  Yu-Ciao Lin ,  Yu-Chieh Lin ,  Hsin-Liang Liu ,  Chun-Hung Cheng ,  Yuan-Cheng Yang ,  Yau-Kae Sheu

IPC: H01L27/06 ,  H01L29/78 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/76232

Abstract: A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.

Abstract translation: 浅沟槽隔离结构的制造方法包括以下步骤。 首先，提供衬底，其中在衬底中限定高电压器件区域。 然后，执行第一蚀刻工艺以部分地去除衬底，从而在高压器件区域中形成初步浅沟槽。 然后，进行第二蚀刻处理以进一步去除对应于初步浅沟槽的衬底，从而在高电压器件区域中形成第一浅沟槽。 之后，在第一浅沟槽中填充电介质材料，从而形成第一浅沟槽隔离结构。

公开(公告)号：US08034690B2

公开(公告)日：2011-10-11

申请号：US12696055

申请日：2010-01-29

Applicant: Ping-Chia Shih ,  Yu-Cheng Wang ,  Chun-Sung Huang ,  Yuan-Cheng Yang ,  Chung-Che Huang ,  Chin-Fu Lin

Inventor： Ping-Chia Shih ,  Yu-Cheng Wang ,  Chun-Sung Huang ,  Yuan-Cheng Yang ,  Chung-Che Huang ,  Chin-Fu Lin

IPC: H01L21/336

CPC classification number: H01L21/311

Abstract: An exemplary method of etching an oxide layer and a nitride layer is provided. In particular, a substrate is provided. A surface of the substrate has an isolating structure projecting therefrom. A first oxide layer, a nitride layer and a second oxide layer are sequentially provided on the surface of the substrate, wherein the first oxide layer is uncovered on the isolating structure, the nitride layer is formed overlying the first oxide layer, and the second oxide layer is formed overlying the nitride layer. An isotropic etching process is performed by using an etching mask unmasking the isolating structure, and thereby removing the unmasked portion of the second oxide layer and the unmasked portion of the nitride layer and further exposing sidewalls of the isolating structure. The unmasked portion of the first oxide layer generally is partially removed due to over-etching.

Abstract translation: 提供蚀刻氧化物层和氮化物层的示例性方法。 特别地，提供了基板。 基板的表面具有从其突出的隔离结构。 第一氧化物层，氮化物层和第二氧化物层依次设置在衬底的表面上，其中第一氧化物层未被覆盖在隔离结构上，氮化物层形成在第一氧化物层上，第二氧化物 层叠在氮化物层上。 通过使用非掩蔽隔离结构的蚀刻掩模进行各向同性蚀刻处理，从而去除第二氧化物层的未掩模部分和氮化物层的未掩模部分，并进一步暴露隔离结构的侧壁。 由于过蚀刻，第一氧化物层的未掩模部分通常被部分去除。

公开(公告)号：US20110189859A1

公开(公告)日：2011-08-04

申请号：US12696055

申请日：2010-01-29

Applicant: Ping-Chia Shih ,  Yu-Cheng Wang ,  Chun-Sung Huang ,  Yuan-Cheng Yang ,  Chung-Che Huang ,  Chin-Fu Lin

Inventor： Ping-Chia Shih ,  Yu-Cheng Wang ,  Chun-Sung Huang ,  Yuan-Cheng Yang ,  Chung-Che Huang ,  Chin-Fu Lin

IPC: H01L21/311

CPC classification number: H01L21/311

Abstract: An exemplary method of etching an oxide layer and a nitride layer is provided. In particular, a substrate is provided. A surface of the substrate has an isolating structure projecting therefrom. A first oxide layer, a nitride layer and a second oxide layer are sequentially provided on the surface of the substrate, wherein the first oxide layer is uncovered on the isolating structure, the nitride layer is formed overlying the first oxide layer, and the second oxide layer is formed overlying the nitride layer. An isotropic etching process is performed by using an etching mask unmasking the isolating structure, and thereby removing the unmasked portion of the second oxide layer and the unmasked portion of the nitride layer and further exposing sidewalls of the isolating structure. The unmasked portion of the first oxide layer generally is partially removed due to over-etching.

Abstract translation: 提供蚀刻氧化物层和氮化物层的示例性方法。 特别地，提供了基板。 基板的表面具有从其突出的隔离结构。 第一氧化物层，氮化物层和第二氧化物层依次设置在衬底的表面上，其中第一氧化物层未被覆盖在隔离结构上，氮化物层形成在第一氧化物层上，第二氧化物 层叠在氮化物层上。 通过使用非掩蔽隔离结构的蚀刻掩模进行各向同性蚀刻处理，从而去除第二氧化物层的未掩模部分和氮化物层的未掩模部分，并进一步暴露隔离结构的侧壁。 由于过蚀刻，第一氧化物层的未掩模部分通常被部分去除。