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    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20080173547A1

    公开(公告)日：2008-07-24

    申请号：US11832931

    申请日：2007-08-02

    Applicant: Yoshiyuki Ohba ,  Toshihiko Hayashi

    Inventor： Yoshiyuki Ohba ,  Toshihiko Hayashi

    IPC: C25D5/02

    CPC classification number: H01L21/76873 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76867 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed herein is a method for manufacturing a semiconductor device, the method including the steps of: forming a recess in an insulating film provided over a substrate; forming a plating seed layer in such a way that an inner wall of the recess is covered, the plating seed layer arising from sequential deposition of an alloy layer composed of copper and a metal other than copper and a conductive layer composed mainly of copper; burying a conductive layer composed mainly of copper by plating in the recess on which the plating seed layer is provided; and carrying out heat treatment to cause the metal in the alloy layer to react with a constituent in the insulating film, to thereby form a barrier film composed of a metal compound having a copper diffusion barrier function at an interface between the alloy layer and the insulating film.

    Abstract translation: 本发明公开了一种制造半导体器件的方法，该方法包括以下步骤：在设置在衬底上的绝缘膜中形成凹陷; 以覆盖凹部的内壁的方式形成电镀种子层，由铜和铜以外的金属的合金层的顺序沉积而产生的电镀种子层和主要由铜构成的导电层; 通过电镀将主要由铜构成的导电层埋设在设置有镀覆种子层的凹部中; 进行热处理，使合金层中的金属与绝缘膜中的成分反应，从而在合金层和绝缘层之间的界面处形成由具有铜扩散阻挡功能的金属化合物构成的阻挡膜 电影。

    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
    制造半导体器件和半导体器件的方法

    公开(公告)号：US20080054467A1

    公开(公告)日：2008-03-06

    申请号：US11850332

    申请日：2007-09-05

    Applicant: Yoshiyuki Ohba ,  Toshihiko Hayashi

    Inventor： Yoshiyuki Ohba ,  Toshihiko Hayashi

    IPC: H01L23/52 ,  H01L21/4763

    CPC classification number: H01L21/76831 ,  H01L21/76826 ,  H01L21/76835 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for manufacturing a semiconductor device includes: the first step of forming, in an insulating film provided on a substrate, a recess that is porositized at least at inner walls; the second step of forming an alloy layer made of copper and a metal other than copper so as to cover the inner walls of the recess; the third step of burying a conductive layer made primarily of copper in the recess provided with the alloy layer; the fourth step of subjecting the thus treated substrate to thermal treatment to cause the metal in the alloy layer to react with a constituent component of the insulating film to form a barrier film made of a metal compound having Cu diffusion barrier properties.

    Abstract translation: 一种制造半导体器件的方法包括：第一步骤，在设置在基板上的绝缘膜中形成至少在内壁形成孔的凹部; 形成由铜和铜以外的金属制成的合金层以覆盖凹部的内壁的第二步骤; 在设置有合金层的凹部中埋设主要由铜制成的导电层的第三步骤; 对经过处理的基板进行热处理以使合金层中的金属与绝缘膜的构成成分反应的第四步骤形成由具有Cu扩散阻挡性的金属化合物制成的阻挡膜。

    Method for manufacturing a semiconductor device and semiconductor device
    4.
    发明授权
    Method for manufacturing a semiconductor device and semiconductor device 有权
    半导体器件和半导体器件的制造方法

    公开(公告)号：US07612452B2

    公开(公告)日：2009-11-03

    申请号：US11850332

    申请日：2007-09-05

    Applicant: Yoshiyuki Ohba ,  Toshihiko Hayashi

    Inventor： Yoshiyuki Ohba ,  Toshihiko Hayashi

    IPC: H01L23/52

    CPC classification number: H01L21/76831 ,  H01L21/76826 ,  H01L21/76835 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for manufacturing a semiconductor device includes: the first step of forming, in an insulating film provided on a substrate, a recess that is porositized at least at inner walls; the second step of forming an alloy layer made of copper and a metal other than copper so as to cover the inner walls of the recess; the third step of burying a conductive layer made primarily of copper in the recess provided with the alloy layer; the fourth step of subjecting the thus treated substrate to thermal treatment to cause the metal in the alloy layer to react with a constituent component of the insulating film to form a barrier film made of a metal compound having Cu diffusion barrier properties.

    Abstract translation: 一种制造半导体器件的方法包括：第一步骤，在设置在基板上的绝缘膜中形成至少在内壁形成孔的凹部; 形成由铜和铜以外的金属制成的合金层以覆盖凹部的内壁的第二步骤; 在设置有合金层的凹部中埋设主要由铜制成的导电层的第三步骤; 对经过处理的基板进行热处理以使合金层中的金属与绝缘膜的构成成分反应的第四步骤形成由具有Cu扩散阻挡性的金属化合物制成的阻挡膜。

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