公开(公告)号：US06699789B2

公开(公告)日：2004-03-02

申请号：US10113705

申请日：2002-03-27

Applicant: Zhih-Sheng Yang ,  Chung-Yan Cheng ,  Ying-Yan Huang ,  Jason C. S. Chu

Inventor： Zhih-Sheng Yang ,  Chung-Yan Cheng ,  Ying-Yan Huang ,  Jason C. S. Chu

IPC: H01L21443

CPC classification number: H01L21/7685 ,  H01L21/2855 ,  H01L21/32051

Abstract: Embodiments of the present invention are directed to a metallization process for reducing the stress existing between the Al—Cu layer and the titanium nitride (TiN) layer, and solving the galvanic problem. The process does so by cooling the wafer in the vacuum apparatus where the metallization process is performed after formation of the Al—Cu layer and before the formation of the TiN layer. In accordance with an aspect of the present invention, a metallization process comprises placing a wafer in an Al—Cu sputtering chamber to form an Al—Cu layer on the wafer, and transferring the wafer to a titanium nitride sputtering chamber. An inert gas is introduced into the titanium nitride sputtering chamber to cool the wafer. A titanium nitride layer is formed on the Al—Cu layer of the wafer in the titanium nitride sputtering layer after cooling the wafer.

Abstract translation: 本发明的实施例涉及一种用于减少存在于Al-Cu层和氮化钛（TiN）层之间的应力并且解决电偶问题的金属化方法。 该方法通过冷却在形成Al-Cu层之后和形成TiN层之前进行金属化处理的真空装置中的晶片。 根据本发明的一个方面，金属化工艺包括将晶片放置在Al-Cu溅射室中以在晶片上形成Al-Cu层，并将晶片转移到氮化钛溅射室。 将惰性气体引入到氮化钛溅射室中以冷却晶片。 在冷却晶片之后，在氮化钛溅射层中的晶片的Al-Cu层上形成氮化钛层。