Charge pump circuits, systems, and operational methods thereof
    1.
    发明授权
    Charge pump circuits, systems, and operational methods thereof 有权
    电荷泵电路,系统及其操作方法

    公开(公告)号:US08378737B2

    公开(公告)日:2013-02-19

    申请号:US13417016

    申请日:2012-03-09

    CPC classification number: H02M3/073 G11C5/145 H02M2003/075 H02M2003/077

    Abstract: A charge pump circuit includes at least one stage between an input end and an output end. The at least one stage includes a first CMOS transistor coupled with a first capacitor and a second CMOS transistor coupled with a second capacitor. The at least one stage is capable of receiving a first timing signal and a second timing signal for pumping an input voltage at the input end to an output voltage at the output end. During a transitional period of the first timing signal and the second timing signal, the at least one stage is capable of substantially turning off at least one of the first CMOS transistor and the second CMOS transistor for substantially reducing leakage currents flowing through at least one of the first CMOS transistor and the second CMOS transistor.

    Abstract translation: 电荷泵电路包括在输入端和输出端之间的至少一个级。 所述至少一个级包括与第一电容器耦合的第一CMOS晶体管和与第二电容器耦合的第二CMOS晶体管。 所述至少一个级能够接收第一定时信号和第二定时信号,用于将输入端的输入电压泵送到输出端的输出电压。 在第一定时信号和第二定时信号的过渡时段期间,至少一个级能够基本上关闭第一CMOS晶体管和第二CMOS晶体管中的至少一个,用于基本上减少流过至少一个 第一CMOS晶体管和第二CMOS晶体管。

    CHARGE PUMP CIRCUITS, SYSTEMS, AND OPERATIONAL METHODS THEREOF
    2.
    发明申请
    CHARGE PUMP CIRCUITS, SYSTEMS, AND OPERATIONAL METHODS THEREOF 有权
    充电泵电路,系统及其操作方法

    公开(公告)号:US20120169409A1

    公开(公告)日:2012-07-05

    申请号:US13417016

    申请日:2012-03-09

    CPC classification number: H02M3/073 G11C5/145 H02M2003/075 H02M2003/077

    Abstract: A charge pump circuit includes at least one stage between an input end and an output end. The at least one stage includes a first CMOS transistor coupled with a first capacitor and a second CMOS transistor coupled with a second capacitor. The at least one stage is capable of receiving a first timing signal and a second timing signal for pumping an input voltage at the input end to an output voltage at the output end. During a transitional period of the first timing signal and the second timing signal, the at least one stage is capable of substantially turning off at least one of the first CMOS transistor and the second CMOS transistor for substantially reducing leakage currents flowing through at least one of the first CMOS transistor and the second CMOS transistor.

    Abstract translation: 电荷泵电路包括在输入端和输出端之间的至少一个级。 所述至少一个级包括与第一电容器耦合的第一CMOS晶体管和与第二电容器耦合的第二CMOS晶体管。 所述至少一个级能够接收第一定时信号和第二定时信号,用于将输入端的输入电压泵送到输出端的输出电压。 在第一定时信号和第二定时信号的过渡时段期间,至少一个级能够基本上关闭第一CMOS晶体管和第二CMOS晶体管中的至少一个,用于基本上减少流过至少一个 第一CMOS晶体管和第二CMOS晶体管。

    CHARGE PUMP CIRCUITS, SYSTEMS, AND OPERATIONAL METHODS THEREOF
    5.
    发明申请
    CHARGE PUMP CIRCUITS, SYSTEMS, AND OPERATIONAL METHODS THEREOF 有权
    充电泵电路,系统及其操作方法

    公开(公告)号:US20100253418A1

    公开(公告)日:2010-10-07

    申请号:US12751182

    申请日:2010-03-31

    CPC classification number: H02M3/073 G11C5/145 H02M2003/075 H02M2003/077

    Abstract: A charge pump circuit includes at least one stage between an input end and an output end. The at least one stage includes a first CMOS transistor coupled with a first capacitor and a second CMOS transistor coupled with a second capacitor. The at least one stage is capable of receiving a first timing signal and a second timing signal for pumping an input voltage at the input end to an output voltage at the output end. During a transitional period of the first timing signal and the second timing signal, the at least one stage is capable of substantially turning off at least one of the first CMOS transistor and the second CMOS transistor for substantially reducing leakage currents flowing through at least one of the first CMOS transistor and the second CMOS transistor.

    Abstract translation: 电荷泵电路包括在输入端和输出端之间的至少一个级。 所述至少一个级包括与第一电容器耦合的第一CMOS晶体管和与第二电容器耦合的第二CMOS晶体管。 所述至少一个级能够接收第一定时信号和第二定时信号,用于将输入端的输入电压泵送到输出端的输出电压。 在第一定时信号和第二定时信号的过渡时段期间,至少一个级能够基本上关闭第一CMOS晶体管和第二CMOS晶体管中的至少一个,用于基本上减少流过至少一个 第一CMOS晶体管和第二CMOS晶体管。

    Charge pump circuits, systems, and operational methods thereof
    6.
    发明授权
    Charge pump circuits, systems, and operational methods thereof 有权
    电荷泵电路,系统及其操作方法

    公开(公告)号:US08154333B2

    公开(公告)日:2012-04-10

    申请号:US12751182

    申请日:2010-03-31

    CPC classification number: H02M3/073 G11C5/145 H02M2003/075 H02M2003/077

    Abstract: A charge pump circuit includes at least one stage between an input end and an output end. The at least one stage includes a first CMOS transistor coupled with a first capacitor and a second CMOS transistor coupled with a second capacitor. The at least one stage is capable of receiving a first timing signal and a second timing signal for pumping an input voltage at the input end to an output voltage at the output end. During a transitional period of the first timing signal and the second timing signal, the at least one stage is capable of substantially turning off at least one of the first CMOS transistor and the second CMOS transistor for substantially reducing leakage currents flowing through at least one of the first CMOS transistor and the second CMOS transistor.

    Abstract translation: 电荷泵电路包括在输入端和输出端之间的至少一个级。 所述至少一个级包括与第一电容器耦合的第一CMOS晶体管和与第二电容器耦合的第二CMOS晶体管。 所述至少一个级能够接收第一定时信号和第二定时信号,用于将输入端的输入电压泵送到输出端的输出电压。 在第一定时信号和第二定时信号的过渡时段期间,至少一个级能够基本上关闭第一CMOS晶体管和第二CMOS晶体管中的至少一个,用于基本上减少流过至少一个 第一CMOS晶体管和第二CMOS晶体管。

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