公开(公告)号：US07986184B2

公开(公告)日：2011-07-26

申请号：US12641817

申请日：2009-12-18

Applicant: Willem Frederick Adrianus Besling ,  Theodorus Wilhelmus Bakker ,  Yann Lamy ,  Jinesh Kochupurackal ,  Fred Roozeboom

Inventor： Willem Frederick Adrianus Besling ,  Theodorus Wilhelmus Bakker ,  Yann Lamy ,  Jinesh Kochupurackal ,  Fred Roozeboom

IPC: H03F1/00

CPC classification number: H01L23/66 ,  H01L23/642 ,  H01L24/48 ,  H01L24/49 ,  H01L28/92 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/49175 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: A variety of circuits, methods and devices are implemented for radiofrequency amplifiers. According to one such implementation, a radiofrequency amplifier circuit is implemented in a SMD package. The circuit amplifies a radiofrequency signal having a base-band portion and a plurality of carrier signals frequency-spaced larger than the base-band bandwidth. The circuit includes a radiofrequency transistor connected to a circuit output having a parasitic output capacitance. The source-drain terminal is electrically connected to the circuit output. An internal shunt inductor provides compensation for the parasitic output capacitance. A high-density capacitor is connected between the internal shunt inductor and a circuit ground. The high-density capacitor has a terminal with a surface area can be at least ten times that of a corresponding planar surface.

Abstract translation: 为射频放大器实现了各种电路，方法和设备。 根据一种这样的实施方式，在SMD封装中实现射频放大器电路。 该电路放大具有频带宽度大于基带带宽的基带部分和多个载波信号的射频信号。 该电路包括连接到具有寄生输出电容的电路输出的射频晶体管。 源极 - 漏极端子电连接到电路输出端。 内部并联电感器为寄生输出电容提供补偿。 内部并联电感和电路接地之间连接高密度电容。 高密度电容器具有表面积的至少十倍于相应的平面表面的端子。

公开(公告)号：US07385469B2

公开(公告)日：2008-06-10

申请号：US11429239

申请日：2006-05-08

Applicant: Jean-Philippe Michel ,  Yann Lamy ,  Anne-Sophie Royet ,  Bernard Viala

Inventor： Jean-Philippe Michel ,  Yann Lamy ,  Anne-Sophie Royet ,  Bernard Viala

IPC: H01P1/215

CPC classification number: H01P1/215 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The integrated microelectronics component comprises an electric conductor forming a transmission line element for a radio frequency electromagnetic wave. This electric conductor is surrounded at least partially by a preferably closed magnetic circuit, formed at least by superposition of a layer of ferromagnetic material having a saturation magnetization value greater than or equal to 800 kA/m and of a layer of magnetic material. The layer of magnetic material then generates a uniaxial magnetic anisotropy in the adjacent ferromagnetic layer. A high magnetization can then be combined with a high anisotropy, thus enabling operation in high frequency ranges, for example about 5 to 20 GHz.

Abstract translation: 集成微电子部件包括形成用于射频电磁波的传输线元件的电导体。 该电导体至少部分地由优选闭合的磁路包围，至少通过叠加具有大于或等于800kA / m的饱和磁化强度的铁磁材料层和一层磁性材料形成。 然后，磁性材料层在相邻的铁磁层中产生单轴磁各向异性。 然后可以将高磁化率与高各向异性结合，从而使得能够在高频范围内操作，例如约5至20GHz。

公开(公告)号：US20060290442A1

公开(公告)日：2006-12-28

申请号：US11429239

申请日：2006-05-08

Applicant: Jean-Philippe Michel ,  Yann Lamy ,  Anne-Sophie Royet ,  Bernard Viala

Inventor： Jean-Philippe Michel ,  Yann Lamy ,  Anne-Sophie Royet ,  Bernard Viala

IPC: H04B3/14

CPC classification number: H01P1/215 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The integrated microelectronics component comprises an electric conductor forming a transmission line element for a radio frequency electromagnetic wave. This electric conductor is surrounded at least partially by a preferably closed magnetic circuit, formed at least by superposition of a layer of ferromagnetic material having a saturation magnetization value greater than or equal to 800 kA/m and of a layer of magnetic material. The layer of magnetic material then generates a uniaxial magnetic anisotropy in the adjacent ferromagnetic layer. A high magnetization can then be combined with a high anisotropy, thus enabling operation in high frequency ranges, for example about 5 to 20 GHz.

Abstract translation: 集成微电子部件包括形成用于射频电磁波的传输线元件的电导体。 该电导体至少部分地由优选闭合的磁路包围，至少通过叠加具有大于或等于800kA / m的饱和磁化强度的铁磁材料层和一层磁性材料形成。 然后，磁性材料层在相邻的铁磁层中产生单轴磁各向异性。 然后可以将高磁化率与高各向异性结合，从而使得能够在高频范围内操作，例如约5至20GHz。

公开(公告)号：US20110148529A1

公开(公告)日：2011-06-23

申请号：US12641817

申请日：2009-12-18

Applicant: Willem Frederick Adrianus Besling ,  Theodorus Wilhelmus Bakker ,  Yann Lamy ,  Fred Roozeboom

Inventor： Willem Frederick Adrianus Besling ,  Theodorus Wilhelmus Bakker ,  Yann Lamy ,  Fred Roozeboom

IPC: H03F3/191 ,  H01L21/02

CPC classification number: H01L23/66 ,  H01L23/642 ,  H01L24/48 ,  H01L24/49 ,  H01L28/92 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/49175 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: A variety of circuits, methods and devices are implemented for radiofrequency amplifiers. According to one such implementation, a radiofrequency amplifier circuit is implemented in a SMD package. The circuit amplifies a radiofrequency signal having a base-band portion and a plurality of carrier signals frequency-spaced larger than the base-band bandwidth. The circuit includes a radiofrequency transistor connected to a circuit output having a parasitic output capacitance. The source-drain terminal is electrically connected to the circuit output. An internal shunt inductor provides compensation for the parasitic output capacitance. A high-density capacitor is connected between the internal shunt inductor and a circuit ground. The high-density capacitor has a terminal with a surface area can be at least ten times that of a corresponding planar surface.

Abstract translation: 为射频放大器实现了各种电路，方法和设备。 根据一种这样的实施方式，在SMD封装中实现射频放大器电路。 该电路放大具有频带宽度大于基带带宽的基带部分和多个载波信号的射频信号。 该电路包括连接到具有寄生输出电容的电路输出的射频晶体管。 源极 - 漏极端子电连接到电路输出端。 内部并联电感器为寄生输出电容提供补偿。 内部并联电感和电路接地之间连接高密度电容。 高密度电容器具有表面积的至少十倍于相应的平面表面的端子。