Electronic devices, circuits and their manufacture
    1.
    发明授权
    Electronic devices, circuits and their manufacture 有权
    电子设备,电路及其制造

    公开(公告)号:US09123894B2

    公开(公告)日:2015-09-01

    申请号:US13146389

    申请日:2010-01-27

    摘要: A method of manufacturing an electronic device, comprising a layer of semiconductive material and at least one insulative feature arranged to interrupt the layer of semiconductive material, comprises: providing a layer of semiconductive material, and a layer of compressible material supporting the layer of semiconductive material; and forming the or each insulative feature by a method comprising displacing a respective selected portion of the layer of semiconductive material towards the compressible material so as to compress compressible material under the or each displaced portion and separate at least partly the or each displaced portion from undisplaced semiconductive material.

    摘要翻译: 一种制造电子器件的方法,包括半导体材料层和布置成中断半导体材料层的至少一个绝缘特征,包括:提供半导体材料层和支撑半导体材料层的可压缩材料层 ; 以及通过包括使所述半导体材料层的相应选定部分朝向所述可压缩材料移位以便压缩所述或每个移位部分下方的可压缩材料并且至少部分地将所述或每个位移部分与未置换的部分分离的方法来形成所述绝缘或每个绝缘特征 半导体材料。

    ELECTRONIC DEVICES, CIRCUITS AND THEIR MANUFACTURE
    2.
    发明申请
    ELECTRONIC DEVICES, CIRCUITS AND THEIR MANUFACTURE 有权
    电子设备,电路及其制造

    公开(公告)号:US20120153428A1

    公开(公告)日:2012-06-21

    申请号:US13146389

    申请日:2010-01-27

    IPC分类号: H01L21/762 H01L27/02

    摘要: A method of manufacturing an electronic device, comprising a layer of semiconductive material and at least one insulative feature arranged to interrupt the layer of semiconductive material, comprises: providing a layer of semiconductive material, and a layer of compressible material supporting the layer of semiconductive material; and forming the or each insulative feature by a method comprising displacing a respective selected portion of the layer of semiconductive material towards the compressible material so as to compress compressible material under the or each displaced portion and separate at least partly the or each displaced portion from undisplaced semiconductive material.

    摘要翻译: 一种制造电子器件的方法,包括半导体材料层和布置成中断半导体材料层的至少一个绝缘特征,包括:提供半导体材料层,以及支撑半导体材料层的可压缩材料层 ; 以及通过包括使所述半导体材料层的相应选定部分朝向所述可压缩材料移位以便压缩所述或每个移位部分下方的可压缩材料并且至少部分地将所述或每个移位部分与未置换的部分分离的方法来形成所述或每个绝缘特征 半导体材料。