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公开(公告)号：US08876998B2
公开(公告)日：2014-11-04
申请号：US13155790
申请日：2011-06-08
Applicant: Jong Hyun Park , Chang Dong Kim , Gee Sung Chae , Juhn Suk Yoo , Soo Young Yoon , Soon Wook Cha , Won Bong Jang , Jae Kyung Choi
Inventor： Jong Hyun Park , Chang Dong Kim , Gee Sung Chae , Juhn Suk Yoo , Soo Young Yoon , Soon Wook Cha , Won Bong Jang , Jae Kyung Choi
CPC classification number: H01L51/0097 , C09J5/00 , C09J2203/326 , C09J2205/302 , C09J2205/31 , H01L51/003 , H01L2251/5338 , Y02E10/549 , Y10T156/1168
Abstract: Disclosed is a method for manufacturing a flexible device comprising: forming an adhesive layer on a support substrate; adhering a flexible substrate onto the adhesive layer; forming a device layer on the flexible substrate; and separating the support substrate from the flexible substrate, wherein the adhesive layer comprises a self-assembled monolayer (SAM).
Abstract translation: 公开了一种用于制造柔性装置的方法，包括：在支撑基板上形成粘合剂层; 将柔性基材粘附到粘合剂层上; 在柔性基板上形成器件层; 以及将所述支撑衬底与所述柔性衬底分离，其中所述粘合剂层包括自组装单层（SAM）。
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2.发明授权Semiconductor device and method for forming device isolation film of semiconductor device 失效半导体器件用半导体器件及其形成装置隔离膜的方法公开(公告)号：US07867870B2
公开(公告)日：2011-01-11
申请号：US11931042
申请日：2007-10-31
Applicant: Won Bong Jang
Inventor： Won Bong Jang
IPC: H01L21/76
CPC classification number: H01L21/764
Abstract: A device isolation film in a semiconductor device and a method for forming the same are provided. The method includes etching a middle portion of a device isolation film having a deposition structure including a Spin-On-Dielectric (SOD) oxide film and a High Density Plasma (HDP) oxide film to form a hole and filling an upper portion of the hole with an oxide film having poor step coverage characteristics to form a second hole extending along the middle portion of the device isolation film. The second hole serves as a buffer for stress generated at the interface between an oxide film, which can be a device isolation film, and a silicon layer, which can be a semiconductor substrate, thereby increasing the operating current of a transistor and improving the electrical characteristics of the resulting device.
Abstract translation: 提供半导体器件中的器件隔离膜及其形成方法。 该方法包括蚀刻具有包括旋涂电介质（SOD）氧化物膜和高密度等离子体（HDP）氧化物膜）的沉积结构的器件隔离膜的中间部分，以形成孔并填充孔的上部 具有差的阶梯覆盖特性的氧化膜，以形成沿着器件隔离膜的中间部分延伸的第二孔。 第二孔用作在可以是器件隔离膜的氧化物膜和可以是半导体衬底的硅层之间的界面产生的应力的缓冲器，从而增加晶体管的工作电流并改善电气 所得设备的特性。
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公开(公告)号：US20120118478A1
公开(公告)日：2012-05-17
申请号：US13155790
申请日：2011-06-08
Applicant: Jong Hyun PARK , Chang Dong Kim , Gee Sung Chae , Juhn Suk Yoo , Soo Young Yoon , Soon Wook Cha , Won Bong Jang , Jae Kyung Choi
Inventor： Jong Hyun PARK , Chang Dong Kim , Gee Sung Chae , Juhn Suk Yoo , Soo Young Yoon , Soon Wook Cha , Won Bong Jang , Jae Kyung Choi
CPC classification number: H01L51/0097 , C09J5/00 , C09J2203/326 , C09J2205/302 , C09J2205/31 , H01L51/003 , H01L2251/5338 , Y02E10/549 , Y10T156/1168
Abstract: Disclosed is a method for manufacturing a flexible device comprising: forming an adhesive layer on a support substrate; adhering a flexible substrate onto the adhesive layer; forming a device layer on the flexible substrate; and separating the support substrate from the flexible substrate, wherein the adhesive layer comprises a self-assembled monolayer (SAM).
Abstract translation: 公开了一种用于制造柔性装置的方法，包括：在支撑基板上形成粘合剂层; 将柔性基材粘附到粘合剂层上; 在柔性基板上形成器件层; 以及将所述支撑衬底与所述柔性衬底分离，其中所述粘合剂层包括自组装单层（SAM）。
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4.发明申请SEMICONDUCTOR DEVICE AND METHOD FOR FORMING DEVICE ISOLATION FILM OF SEMICONDUCTOR DEVICE 失效用于形成半导体器件的器件隔离膜的半导体器件和方法公开(公告)号：US20090001505A1
公开(公告)日：2009-01-01
申请号：US11931042
申请日：2007-10-31
Applicant: Won Bong Jang
Inventor： Won Bong Jang
IPC: H01L21/762 , H01L23/58
CPC classification number: H01L21/764
Abstract: A device isolation film in a semiconductor device and a method for forming the same are provided. The method includes etching a middle portion of a device isolation film having a deposition structure including a Spin-On-Dielectric (SOD) oxide film and a High Density Plasma (HDP) oxide film to form a hole and filling an upper portion of the hole with an oxide film having poor step coverage characteristics to form a second hole extending along the middle portion of the device isolation film. The second hole serves as a buffer for stress generated at the interface between an oxide film, which can be a device isolation film, and a silicon layer, which can be a semiconductor substrate, thereby increasing the operating current of a transistor and improving the electrical characteristics of the resulting device.
Abstract translation: 提供半导体器件中的器件隔离膜及其形成方法。 该方法包括蚀刻具有包括旋涂电介质（SOD）氧化物膜和高密度等离子体（HDP）氧化物膜）的沉积结构的器件隔离膜的中间部分，以形成孔并填充孔的上部 具有差的阶梯覆盖特性的氧化膜，以形成沿着器件隔离膜的中间部分延伸的第二孔。 第二孔用作在可以是器件隔离膜的氧化物膜和可以是半导体衬底的硅层之间的界面产生的应力的缓冲器，从而增加晶体管的工作电流并改善电气 所得设备的特性。
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