公开(公告)号：US20130264628A1

公开(公告)日：2013-10-10

申请号：US13993444

申请日：2011-09-22

申请人： Randy J. Koval ,  Max F. Hineman ,  Ronald A. Weimer ,  Vinayak K. Shamanna ,  Thomas M. Graettinger ,  William R. Kueber ,  Christopher Larsen ,  Alex J. Schrinsky

发明人： Randy J. Koval ,  Max F. Hineman ,  Ronald A. Weimer ,  Vinayak K. Shamanna ,  Thomas M. Graettinger ,  William R. Kueber ,  Christopher Larsen ,  Alex J. Schrinsky

IPC分类号： H01L21/306 ,  H01L29/788

CPC分类号： H01L21/30604 ,  H01L21/76 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/788 ,  H01L29/7881 ,  H01L29/792

摘要： Embodiments of the present disclosure describe techniques and configurations relating to use of an etch process post wordline definition to improve data retention in a flash memory device. In one embodiment, a method includes forming a plurality of wordline structures on a substrate, wherein individual wordline structures of the plurality of wordline structures include a control gate having an electrically conductive material and a cap having an electrically insulative material formed on the control gate, depositing an electrically insulative material to form a liner on a surface of the individual wordline structures, and etching the liner to remove at least a portion of the liner. Other embodiments may be described and/or claimed.

摘要翻译： 本公开的实施例描述与使用蚀刻处理后字幕定义相关的技术和配置以改善闪存设备中的数据保持。 在一个实施例中，一种方法包括在衬底上形成多个字线结构，其中多个字线结构中的各个字线结构包括具有导电材料的控制栅极和在控制栅极上形成有电绝缘材料的盖， 沉积电绝缘材料以在单个字线结构的表面上形成衬垫，以及蚀刻衬垫以去除衬垫的至少一部分。 可以描述和/或要求保护其他实施例。

公开(公告)号：US20130026600A1

公开(公告)日：2013-01-31

申请号：US13192763

申请日：2011-07-28

申请人： James Matthew ,  Gordon Haller ,  Ronald A. Weimer ,  John Hopkins ,  Vinayak K. Shamanna ,  Sanjeev Sapra

发明人： James Matthew ,  Gordon Haller ,  Ronald A. Weimer ,  John Hopkins ,  Vinayak K. Shamanna ,  Sanjeev Sapra

IPC分类号： H01L29/06 ,  H01L21/764

CPC分类号： H01L29/78 ,  H01L21/764 ,  H01L27/11524 ,  H01L27/1157

摘要： Methods of forming air gaps in memory arrays and memory arrays with air gaps thus formed are disclosed. One such method may include forming an isolation region, having a first dielectric, through a charge-storage structure that is over a semiconductor, the isolation region extending into the semiconductor; forming a second dielectric over the isolation region and charge-storage structure; and forming an air gap in the isolation region so that the air gap passes through the charge-storage structure and so that a thickness of the first dielectric is between the air gap and the second dielectric.

摘要翻译： 公开了在如此形成的具有气隙的存储器阵列和存储器阵列中形成气隙的方法。 一种这样的方法可以包括通过半导体上的电荷存储结构形成具有第一电介质的隔离区域，所述隔离区域延伸到半导体中; 在隔离区域和电荷存储结构上形成第二电介质; 并且在隔离区域中形成气隙，使得气隙通过电荷存储结构，并且第一电介质的厚度在气隙和第二电介质之间。

公开(公告)号：US08569130B2

公开(公告)日：2013-10-29

申请号：US13192763

申请日：2011-07-28

申请人： James Mathew ,  Gordon Haller ,  Ronald A. Weimer ,  John Hopkins ,  Vinayak K. Shamanna ,  Sanjeev Sapra

发明人： James Mathew ,  Gordon Haller ,  Ronald A. Weimer ,  John Hopkins ,  Vinayak K. Shamanna ,  Sanjeev Sapra

IPC分类号： H01L21/336

CPC分类号： H01L29/78 ,  H01L21/764 ,  H01L27/11524 ,  H01L27/1157

摘要： Methods of forming air gaps in memory arrays and memory arrays with air gaps thus formed are disclosed. One such method may include forming an isolation region, having a first dielectric, through a charge-storage structure that is over a semiconductor, the isolation region extending into the semiconductor; forming a second dielectric over the isolation region and charge-storage structure; and forming an air gap in the isolation region so that the air gap passes through the charge-storage structure and so that a thickness of the first dielectric is between the air gap and the second dielectric.

摘要翻译： 公开了在如此形成的具有气隙的存储器阵列和存储器阵列中形成气隙的方法。 一种这样的方法可以包括通过半导体上的电荷存储结构形成具有第一电介质的隔离区域，所述隔离区域延伸到半导体中; 在隔离区域和电荷存储结构上形成第二电介质; 并且在隔离区域中形成气隙，使得气隙通过电荷存储结构，并且第一电介质的厚度在气隙和第二电介质之间。

公开(公告)号：US09082714B2

公开(公告)日：2015-07-14

申请号：US13993444

申请日：2011-09-22

申请人： Randy J. Koval ,  Max F. Hineman ,  Ronald A. Weimer ,  Vinayak K. Shamanna ,  Thomas M. Graettinger ,  William R. Kueber ,  Christopher Larsen ,  Alex J. Schrinsky

发明人： Randy J. Koval ,  Max F. Hineman ,  Ronald A. Weimer ,  Vinayak K. Shamanna ,  Thomas M. Graettinger ,  William R. Kueber ,  Christopher Larsen ,  Alex J. Schrinsky

IPC分类号： H01L21/76 ,  H01L21/306 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115

CPC分类号： H01L21/30604 ,  H01L21/76 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/788 ,  H01L29/7881 ,  H01L29/792

摘要： Embodiments of the present disclosure are directed towards use of an etch process post wordline definition to improve data retention in a flash memory device. In one embodiment, a method includes forming a plurality of wordline structures on a substrate, wherein individual wordline structures of the plurality of wordline structures include a control gate having an electrically conductive material and a cap having an electrically insulative material formed on the control gate, depositing an electrically insulative material to form a liner on a surface of the individual wordline structures, and etching the liner to remove at least a portion of the liner. Other embodiments may be described and/or claimed.

摘要翻译： 本公开的实施例涉及使用蚀刻处理后字幕定义来改善闪存器件中的数据保持。 在一个实施例中，一种方法包括在衬底上形成多个字线结构，其中多个字线结构中的各个字线结构包括具有导电材料的控制栅极和在控制栅极上形成有电绝缘材料的盖， 沉积电绝缘材料以在单个字线结构的表面上形成衬垫，以及蚀刻衬垫以去除衬垫的至少一部分。 可以描述和/或要求保护其他实施例。